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Biography
William Gould Dow
William Gould Dow (September 30, 1895 – October 17, 1999) was an United States scientist, educator and inventor. He was a pioneer in a variety of fields, including electrical engineering, space research, computer engineering, and nuclear engineering. He helped develop life-saving radar jamming technology during World War II, and was a long-time professor at the University of Michigan. Wil
  • 327
  • 26 Dec 2022
Biography
William Friese-Greene
William Friese-Greene (born William Edward Green, 7 September 1855 – 5 May 1921) was a prolific English inventor and professional photographer. He is principally known as a pioneer in the field of motion pictures, creating a series of cameras in the period 1888–1891 with which he shot moving pictures in London. He went on to patent an early two-colour filming process in 1905. His inventions
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  • 02 Dec 2022
Biography
William Donald Scherzer
William Donald Scherzer (January 27, 1858 – July 20, 1893) was an American engineer who invented the rolling lift bridge. Scherzer's parents were William and Wilhelmina Scherzer, who immigrated from Germany in 1847.[1] Scherzer was born in Peru, Illinois on January 27, 1858 as the second son in a family of three sons and one daughter.[1] Scherzer received his primary education in publi
  • 575
  • 13 Dec 2022
Biography
William Boeing
William Edward Boeing (/ˈboʊɪŋ/; October 1, 1881 – September 28, 1956) was an United States aviation pioneer who founded The Boeing Company in 1916. Boeing was born in Detroit, Michigan to Marie M. Ortmann, from Vienna, Austria, and Wilhelm Böing (1846–1890) from Hagen-Hohenlimburg, Germany.[1] From a successful family, Wilhelm Böing emigrated to the United States in 1868 and initia
  • 3.3K
  • 05 Dec 2022
Biography
William Anders
William Alison "Bill" Anders (born October 17, 1933), is a retired United States Air Force Major general, former electrical engineer, nuclear engineer, NASA astronaut, and businessman. He is known for being one of the first three persons to leave low Earth orbit and travel to the Moon in Apollo 8 along with fellow astronauts Frank Borman and Jim Lovell as well as for photographing the iconic ima
  • 1.8K
  • 15 Nov 2022
Biography
Willard Franklyn Searle
Capt. Willard Franklyn "Bill" Searle Jr. USN (ret.) (January 17, 1924 – March 31, 2009) was an American ocean engineer who was principally responsible for developing equipment and many of the current techniques utilized in United States Navy diving and salvage operations.[1][2] Searle was born January 17, 1924 in Columbus, Ohio. He graduated from Bexley High School in 1941 and received the
  • 608
  • 14 Nov 2022
Biography
Wilhelm von Urach
Prince Wilhelm of Urach, Count of Württemberg (27 September 1897 – 8 August 1957) was a member of the Germany princely House of Württemberg and a senior automotive production engineer.[1] Most of his professional career was spent working for Daimler-Benz in Stuttgart-Untertürkheim. Between 1941 and 1944, he was sent to France , however, and given responsibility over the technical division
  • 522
  • 26 Dec 2022
Topic Review
Wide-Bandgap Semiconductors Evaluation for High-Performance Domestic Induction Heating
In the induction heating system, the power transferred to the output depends on the equivalent resistance of the load, and the resistance depends on the operating frequency. Due to the switching characteristics of wide-bandgap power semiconductor devices, an induction heating system can be operated at higher operating frequencies.
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  • 25 May 2023
Topic Review
Wide Bandgap Semiconductor Materials in Power Electronics
Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion. However, for many applications, power device requirements such as higher blocking voltage capability, higher switching frequencies, lower switching losses, higher temperature withstand, higher power density in power converters, and enhanced efficiency and reliability have reached a stage where the present Si-based power devices cannot cope with the growing demand and would usually require large, costly cooling systems and output filters to meet the requirements of the application. Wide bandgap (WBG) power semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond (Dia) have recently emerged in the commercial market, with superior material properties that promise substantial performance improvements and are expected to gradually replace the traditional Si-based devices in various power electronics applications. 
  • 317
  • 25 Oct 2023
Topic Review
Wide Band Gap Devices
A decisive property that regulates semiconductor’s electrical and optical properties is the band gap, which is an important physical parameter for designating a wide band gap (WBG) semiconductor, and is defined as the energy needed for electrons to transition to the conduction band from the valence band. The magnetic property of the semiconducting materials also plays an important role for choosing of power devices in terms of energy efficiency with hysteresis and eddy current losses. The WBG semiconductor materials exhibit larger band gaps (2–4 eV) than their silicon (1–1.5 eV) counterparts and offer greater power efficiency, lower overall cost, smaller size, lighter weight, and lower energy consumption. WBG-based components in semiconductor devices permit its operation at high temperatures, which can be problematic when using conventional silicon semiconductors with smaller band gaps. The wider the bandgap, the higher the temperature at which the semiconductor power devices can function.
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  • 23 Dec 2022
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