Electromigration

Version	Summary	Created by	Modification	Content Size	Created at	Operation
1	handwiki	Rita Xu	--	3292	2022-11-24 01:34:33

The content is sourced from: https://handwiki.org/wiki/Chemistry:Electromigration

Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in electronics such as integrated circuits (ICs) decreases, the practical significance of this effect increases.

electromigration microelectronics integrated circuits

References

"Preface". 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005. pp. iii–iv. doi:10.1109/RELPHY.2005.1493049. ISBN 978-0-7803-8803-1. https://dx.doi.org/10.1109%2FRELPHY.2005.1493049
I. Blech: Electromigration in Thin Aluminum Films on Titanium Nitride. Journal of Applied Physics, Vol 47, pp. 1203-1208, April 1976.
J.R. Black: Electromigration - A Brief Survey and Some Recent Results. IEEE Trans. Electron Devices, Vol. ED-16 (No. 4), pp. 338-347, April 1969.
Lombardo, Joseph; Baumans, Xavier D. A.; Željko, Jelić L.; Scheerder, Jeroen E.; Zharinov, Vyacheslav S.; Kramer, Roman; Van de Vondel, Joris; Silhanek, Alejandro V. (2018-03-07). "Healing effect of controlled anti-electromigration on conventional and high-Tc superconducting nanowires" (in en). Small 13 (26): 1700384. doi:10.1002/smll.201700384. PMID 28544388. http://orbi.ulg.ac.be/handle/2268/212130.
J. Lienig, M. Thiele (2018). "Introduction". Fundamentals of Electromigration-Aware Integrated Circuit Design. Springer. pp. 1–12. doi:10.1007/978-3-319-73558-0. ISBN 978-3-319-73557-3. https://link.springer.com/chapter/10.1007/978-3-319-73558-0_1.
J. Lienig, M. Thiele: "The Pressing Need for Electromigration-Aware Physical Design " (Download paper), Proc. of the Int. Symposium on Physical Design (ISPD) 2018, pp. 144–151, March 2018 https://www.ifte.de/mitarbeiter/lienig/ispd_2018_pp144_151.pdf
Lodder, A.; Dekker, J. P. (1998). "The electromigration force in metallic bulk". AIP Conference Proceedings 418 (1): 315–328. doi:10.1063/1.54652. https://aip.scitation.org/doi/abs/10.1063/1.54652. Retrieved 2021-01-15.
Wilson, Syd R.; Tracy, Clarence J.; Freeman, John L. (1993). Handbook of multilevel metallization for integrated circuits: materials, technology, and applications. William Andrew. p. 607. ISBN 978-0-8155-1340-7. https://books.google.com/books?id=jHeN7KYkj28C. , Page 607, equation 24
M. Braunovic, N. K. Myshkin, V. V. Konchits (2006). Electrical Contacts: Fundamentals, Applications and Technology. CRC Press. ISBN 978-1-5744-47279. https://www.crcpress.com/Electrical-Contacts-Fundamentals-Applications-and-Technology/Braunovic-Myshkin-Konchits/p/book/9781574447279.
J. Lienig: "Introduction to Electromigration-Aware Physical Design" (Download paper), Proc. of the Int. Symposium on Physical Design (ISPD) 2006, pp. 39–46, April 2006. http://www.ifte.de/mitarbeiter/lienig/ispd06_emPaper_lienig.pdf
M. Zamri et al "In Situ TEM Observation of Fe-Included Carbon Nanofiber: Evolution of Structural and Electrical Properties in Field Emission Process", ACS Nano, 2012, 6 (11), pp 9567–9573. [Link http://pubs.acs.org/doi/abs/10.1021/nn302889e]
C. Basaran, M. Lin, and H. Ye : A Thermodynamic Model for Electrical Current Induced Damage. International Journal of Solids and Structures, Vol 40, pp. 7315-7327, 2003.
Ceric, H.; Selberherr, S. (2011). "Electromigration in submicron interconnect features of integrated circuits". Materials Science and Engineering: R: Reports 71 (5–6): 53–86. doi:10.1016/j.mser.2010.09.001. ISSN 0927-796X. https://dx.doi.org/10.1016%2Fj.mser.2010.09.001
de Orio, R.L.; Ceric, H.; Selberherr, S. (2012). "Electromigration failure in a copper dual-damascene structure with a through silicon via". Microelectronics Reliability 52 (9–10): 1981–1986. doi:10.1016/j.microrel.2012.07.021. ISSN 0026-2714. PMID 23564974. http://www.pubmedcentral.nih.gov/articlerender.fcgi?tool=pmcentrez&artid=3608028
Dey, Sukanta; Dash, Satyabrata; Nandi, Sukumar; Trivedi, Gaurav (2018). "PGIREM: Reliability-Constrained IR Drop Minimization and Electromigration Assessment of VLSI Power Grid Networks Using Cooperative Coevolution". 2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). pp. 40–45. doi:10.1109/ISVLSI.2018.00018. ISBN 978-1-5386-7099-6. https://dx.doi.org/10.1109%2FISVLSI.2018.00018
Dey, Sukanta; Nandi, Sukumar; Trivedi, Gaurav (2020). "Machine Learning Approach for Fast Electromigration Aware Aging Prediction in Incremental Design of Large Scale On-Chip Power Grid Network". ACM Transactions on Design Automation of Electronic Systems (TODAES). 25. 1–29. doi:10.1145/3399677. https://dx.doi.org/10.1145%2F3399677
Dey, Sukanta; Nandi, Sukumar; Trivedi, Gaurav (2020). "Machine Learning Approach for Fast Electromigration Aware Aging Prediction in Incremental Design of Large Scale On-chip Power Grid Network". ACM Transactions on Design Automation of Electronic Systems 25 (5): 1–29. doi:10.1145/3399677. https://dl.acm.org/doi/10.1145/3399677?cid=99659544720.
Liang (2002). "Kondo resonance in a single-molecule transistor". Nature 417 (6890): 725–9. doi:10.1038/nature00790. PMID 12066180. Bibcode: 2002Natur.417..725L. https://dx.doi.org/10.1038%2Fnature00790

©Text is available under the terms and conditions of the Creative Commons-Attribution ShareAlike (CC BY-SA) license; additional terms may apply. By using this site, you agree to the Terms and Conditions and Privacy Policy.

Upload a video for this entry

Information

Subjects: Others

Contributor MDPI registered users' name will be linked to their SciProfiles pages. To register with us, please refer to https://encyclopedia.pub/register :

HandWiki

View Times: 3.1K

Entry Collection: HandWiki

Update Date: 24 Nov 2022

Table of Contents

Video Upload Options

References