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Ferromagnetism is a phenomenon whereby a substance can become a permanent magnet or strongly reacts to a magnetic field.
Materials | Saturation Magnetization (emu/g) |
Observation | Origin of Ferromagnetism | References |
---|---|---|---|---|
Traditional materials | ||||
Fe | 217.9 | Field-induced change in the magnetic domain | Interactions between electrons in the outermost d orbitals | [34] |
Co | 162.7 | Field-induced change in the magnetic domain | Interactions between electrons in the outermost d orbitals | [34] |
Ni | 57.5 | Field-induced change in the magnetic domain | Interactions between electrons in the outermost d orbitals | [34] |
Magnetite (Fe3O4) | 90.92 | Less strongly magnetized than the parent materials | Magnetic domains of parent materials | [34][35] |
Maghemite (Fe2O3) | 84–88 | Less strongly magnetized than the parent materials | - | [34] |
CoFe2O4 | ~75 | Although the parent materials are ferromagnetic, it shows less ferromagnetism | Magnetism of parent materials | [34] |
Hexaborides of alkaline-earth metals | ||||
CaB6 films | Thickness: 0.5 µm (~4.63) Thickness: 1.6 µm (~0.46) Thickness: 2.3 µm (~0.102) |
Saturation magnetization is inversely proportional to thickness | Defects induced by grains boundaries and lattice distortion | [36] |
CaB6 crystals | ~0.0489 | Samples demonstrated ferromagnetism | Surface contamination | [37] |
BaB6 thin films | ~2.454 at 450–550 °C |
No variation due to thickness | Surface contamination | [9] |
SrB6 | 0.06 μB per unit cell | Temperature affected the magnetic properties | Defects of surface layers | [38] |
Nonmagnetic oxides | ||||
HfO2 films | ~13.223 | Annealing and vacuuming influenced ferromagnetism | Porous structure of the film O vacancies |
[39] |
ZnO thin films | annealed at 150 °C: 0.08 annealed at 600 °C: 0.42 (at 300 K) |
Thermal annealing under an Ar flow caused a defect | Single occupied O vacancies | [40] |
ZnO nanowires | 0.41 at 300 K |
Structural elongation was determined by an applied parallel magnetic field | 2p orbitals of O; when Zn affects the local spin moment of the O orbital |
[30] |
ZnO films doped with K | 0%K-doped ZnO films: 0.79 4%K-doped ZnO films: 1.09 6%K-doped ZnO films: 1.3 8%K-doped ZnO films: 1.91 11%K-doped ZnO films: 0.63 (at T = 300 K) |
With an increase in the K concentration, the saturation magnetization initially increased and then decreased | Holes and ZnK defect |
[41] |
ZnO nanoparticles (NPs) | Raw NPs: Diamagnetic 50 h-milled NPs: 0.031 100 h-milled NPs: 0.047 200 h-milled NPs: 0.086 (at T = 300 K) |
Mechanical milling of diamagnetic ZnO powders induced defects. With an increase in the defect concentration, ferromagnetism increased |
Intrinsic defects related to O and Zn vacancies | [42] |
500 °C-sintered: 0.0183 850 °C-sintered: 0.0190 1300 °C-sintered: 0.00188 (at T = 300 K) |
With an increase in temperature, the saturation magnetization initially increased and then again decreased | -Interstitial (Zn/O) ion defects in the samples |
[43] | |
ZnO single crystals | 0.63 × 10−4 (untreated sample) 0.16 × 10−3 (treated sample) (T = 300 K) |
With an increase in the purity of the sample, the saturation magnetization increased | O vacancies generated by thermal annealing under an Ar flow | [30] |
TiO2 films on Si substrates | PO2 = 50 mTorr: Diamagnetic PO2 = 0.2 mTorr: Very weakly Diamagnetic + FM (~0.005 PO2 = 0.02 mTorr: ~0.075 (At T = 25 °C) |
The magnetic moment of the system was inversely proportional to the concentration of O vacancies | O vacancies | [44] |
TiO2 films | Anatase film: ~0.52 Rutile film: ~1.42 |
Using vacuum, O vacancies can be filled | - Rutile films demonstrated ferromagnetism owing to O vacancies | [45] |
Anatase TiO2 (12 h H2-annealed to 873 K) | 0.066 | Hydrogenation generated local 3d moments | Complexes of Ti3+ and O defects Hybridization of O vacancies with Ti 3d–O 2p orbitals |
[46] |
Transition metal ion (TM = Cr, Mn, Fe, Co, Ni, Cu)-doped rutile TiO2 single crystals | Undoped TiO2: 0.00016 Cr-doped TiO2: 0.00036 Mn-doped TiO2: 0.00055 Fe-doped TiO2: 0.00136 Co-doped TiO2: 0.00021 Ni-doped TiO2: 0.00086 Cu-doped TiO2: 0.00015 |
Results suggest a close superposition of paramagnetic and ferromagnetic behaviors | Separation of the metallic phases of Ni, Co, and Fe Unpaired d electrons of transition metal ions |
[47] |
CeO2−x films | When x = 0.03: ~1.34 When x = 0.1: ~1.02 (T = 300 K) |
Both Ce3+ and Ce4+ are present | O and Ce vacancies | [48] |
MgO films | Untreated sample: ~0.751 Annealed sample: ~0.329 |
Reduction in the concentration of Mg vacancies is proportional to the reduction of Mg after annealing | Mg cation vacancies | [49] |
ZrO2 with Fe | 205.56 | Analysis helped to improve the magnetic characteristics of this system | Induced defects and stress | [50] |
High-purity SnO2 powders | 0 h-milled: 0.0006 4 h-milled: 0.0019 12 h-milled: 0.0055 20 h-milled: 0.0105 |
Temperature increases inversely with saturation magnetization | Singly charged O vacancies High defect density - |
[51] |
SnO2 NPs | Powder in raw form: 0.019 Powder annealed at 773 K: 0.015 Powder annealed at 973 K: 0.012 Powder annealed at 1173 K: 0.010 Powder annealed at 1373 K: 0.006 Powder annealed at 1573 K: 0.001 (T = 300 K) |
The saturation magnetizations of NPs reduced when the NPs were annealed at temperatures higher than 500 °C | O vacancies (T = 5 K) | [52] |
Carbon Nanostructures | ||||
Highly oriented graphite samples | Kish graphite: 0.6 × 10−3 ± 0.2 × 10−3 at T = 300 K |
Different possibilities for the ferromagnetic-like behaviors in the samples | Magnetic impurities Topological defects Itinerant ferromagnetism |
[53] |
C60 | 0.045 (T-A=πr2527 °C) A=πr2 |
Upon applying a pressure of 9 GPa at 800 K, the ferromagnetic behavior significantly decreased | C radical formation | [54] |
Graphene | Annealing at T = 300 °C At 300 K: 0.004 At 2 K: 0.25 Annealing at T = −500 °C At 300 K: 0.020 At 2 K: 0.90 |
Graphene prepared at 1073 K did not clearly exhibit ferromagnetism |
Defects induced by annealing | [27] |
Graphene nanoribbons | 1.1 | Optimization of density twist and turn edge defects | Defect density | [55] |
Implantation of ions on pyrolytic graphite—12C | 14.4 | Implantation steps are directly proportional to the vacancy density | Vacancy density | [56] |
C Nanotubes | 0.5227 | N2 plasma treatment | Amine- and N pyridine-based bonding configuration | [57] |
Magnetic Borides | ||||
Ni2B with O | 29 | Treatment of Ni with boride prevented the oxidation of Ni | Intrinsic defects - |
[58] |
CoB | 75–135 | Change in magnetic properties with an increase in crystallization | Intrinsic defects | [59] |