Ferromagnetism is a phenomenon whereby a substance can become a permanent magnet or strongly reacts to a magnetic field.




| Materials | Saturation Magnetization (emu/g) |
Observation | Origin of Ferromagnetism | References |
|---|---|---|---|---|
| Traditional materials | ||||
| Fe | 217.9 | Field-induced change in the magnetic domain | Interactions between electrons in the outermost d orbitals | [88] |
| Co | 162.7 | Field-induced change in the magnetic domain | Interactions between electrons in the outermost d orbitals | [88] |
| Ni | 57.5 | Field-induced change in the magnetic domain | Interactions between electrons in the outermost d orbitals | [88] |
| Magnetite (Fe3O4) | 90.92 | Less strongly magnetized than the parent materials | Magnetic domains of parent materials | [88,89] |
| Maghemite (Fe2O3) | 84–88 | Less strongly magnetized than the parent materials | - | [88] |
| CoFe2O4 | ~75 | Although the parent materials are ferromagnetic, it shows less ferromagnetism | Magnetism of parent materials | [88] |
| Hexaborides of alkaline-earth metals | ||||
| CaB6 films | Thickness: 0.5 µm (~4.63) Thickness: 1.6 µm (~0.46) Thickness: 2.3 µm (~0.102) |
Saturation magnetization is inversely proportional to thickness | Defects induced by grains boundaries and lattice distortion | [90] |
| CaB6 crystals | ~0.0489 | Samples demonstrated ferromagnetism | Surface contamination | [27] |
| BaB6 thin films | ~2.454 at 450–550 °C |
|||
| No variation due to thickness | Surface contamination | [11] | ||
| SrB6 | 0.06 μB per unit cell | Temperature affected the magnetic properties | Defects of surface layers | [91] |
| Nonmagnetic oxides | ||||
| HfO2 films | ~13.223 | Annealing and vacuuming influenced ferromagnetism | Porous structure of the film O vacancies |
[92] |
| ZnO thin films | annealed at 150 °C: | |||
0.42 (at 300 K) |
Thermal annealing under an Ar flow caused a defect | Single occupied O vacancies | [93] | |
| ZnO nanowires | 0.41 at 300 K |
Structural elongation was determined by an applied parallel magnetic field | 2p orbitals of O; when Zn affects the local spin moment of the O orbital |
[84] |
| ZnO films doped with K | 0%K-doped ZnO films: 0.79 4%K-doped ZnO films: 1.09 6%K-doped ZnO films: 1.3 8%K-doped ZnO films: 1.91 11%K-doped ZnO films: 0.63 (at T = 300 K) |
With an increase in the K concentration, the saturation magnetization initially increased and then decreased | Holes and ZnK defect |
[94] |
| ZnO nanoparticles (NPs) | Raw NPs: Diamagnetic 50 h-milled NPs: 0.031 100 h-milled NPs: 0.047 200 h-milled NPs: 0.086 (at T = 300 K) |
Mechanical milling of diamagnetic ZnO powders induced defects. With an increase in the defect concentration, ferromagnetism increased |
Intrinsic defects related to O and Zn vacancies | [95] |
| 500 °C |
| -sintered: 0.00188 (at T = 300 K) |
With an increase in temperature, the saturation magnetization initially increased and then again decreased | -Interstitial (Zn/O) ion defects in the samples |
[96] | |
| ZnO single crystals | 0.63 × 10−4 (untreated sample) 0.16 × 10−3 (treated sample) (T = 300 K) |
With an increase in the purity of the sample, the saturation magnetization increased | O vacancies generated by thermal annealing under an Ar flow | [84] |
| TiO2 films on Si substrates | PO2 = 50 mTorr: Diamagnetic PO2 = 0.2 mTorr: Very weakly Diamagnetic + FM (~0.005 PO2 = 0.02 mTorr: ~0.075 (At T = 25 °C |
| ) | The magnetic moment of the system was inversely proportional to the concentration of O vacancies | O vacancies | [97] | |
| TiO2 films | Anatase film: ~0.52 Rutile film: ~1.42 |
Using vacuum, O vacancies can be filled | - Rutile films demonstrated ferromagnetism owing to O vacancies | [52] |
| Anatase TiO2 (12 h H2-annealed to 873 K) | 0.066 | Hydrogenation generated local 3d moments | Complexes of Ti3+ and O defects Hybridization of O vacancies with Ti 3d–O 2p orbitals |
[98] |
| Transition metal ion (TM = Cr, Mn, Fe, Co, Ni, Cu)-doped rutile TiO2 single crystals | Undoped TiO2: 0.00016 Cr-doped TiO2: 0.00036 Mn-doped TiO2: 0.00055 Fe-doped TiO2: 0.00136 Co-doped TiO2: 0.00021 Ni-doped TiO2: 0.00086 Cu-doped TiO2: 0.00015 |
Results suggest a close superposition of paramagnetic and ferromagnetic behaviors | Separation of the metallic phases of Ni, Co, and Fe Unpaired d electrons of transition metal ions |
[99] |
| CeO2−x films | When x = 0.03: ~1.34 When x = 0.1: ~1.02 (T = 300 K) |
Both Ce3+ and Ce4+ are present | O and Ce vacancies | [47] |
| MgO films | Untreated sample: ~0.751 Annealed sample: ~0.329 |
Reduction in the concentration of Mg vacancies is proportional to the reduction of Mg after annealing | Mg cation vacancies | [51] |
| ZrO2 with Fe | 205.56 | Analysis helped to improve the magnetic characteristics of this system | Induced defects and stress | [100] |
| High-purity SnO2 powders | 0 h-milled: 0.0006 4 h-milled: 0.0019 12 h-milled: 0.0055 20 h-milled: 0.0105 |
Temperature increases inversely with saturation magnetization | Singly charged O vacancies High defect density - |
[101] |
| SnO2 NPs | Powder in raw form: 0.019 Powder annealed at 773 K: 0.015 Powder annealed at 973 K: 0.012 Powder annealed at 1173 K: 0.010 Powder annealed at 1373 K: 0.006 Powder annealed at 1573 K: 0.001 (T = 300 K) |
The saturation magnetizations of NPs reduced when the NPs were annealed at temperatures higher than 500 °C | O vacancies (T = 5 K) | [102] |
| Carbon Nanostructures | ||||
| Highly oriented graphite samples | Kish graphite: 0.6 × 10−3 ± 0.2 × 10−3 at T = 300 K |
Different possibilities for the ferromagnetic-like behaviors in the samples | Magnetic impurities Topological defects Itinerant ferromagnetism |
[63] |
| C60 | 0.045 (T~A=πr2 |
|||
| Upon applying a pressure of 9 GPa at 800 K, the ferromagnetic behavior significantly decreased | C radical formation | [73] | |
| Graphene | Annealing at T = 300 °C |
At 300 K: 0.020 At 2 K: 0.90 |
Graphene prepared at 1073 K did not clearly exhibit ferromagnetism |
Defects induced by annealing | [62] | |
| Graphene nanoribbons | 1.1 | Optimization of density twist and turn edge defects | Defect density | [78] |
| Implantation of ions on pyrolytic graphite—12C | 14.4 | Implantation steps are directly proportional to the vacancy density | Vacancy density | [69] |
| C Nanotubes | 0.5227 | N2 plasma treatment | Amine- and N pyridine-based bonding configuration | [66] |
| Magnetic Borides | ||||
| Ni2B with O | 29 | Treatment of Ni with boride prevented the oxidation of Ni | Intrinsic defects - |
[103] |
| CoB | 75–135 | Change in magnetic properties with an increase in crystallization | Intrinsic defects | [104] |
This entry is adapted from the peer-reviewed paper 10.3390/condmat7010012