Your browser does not fully support modern features. Please upgrade for a smoother experience.
Submitted Successfully!
+1 credit
Thank you for your contribution! You can also upload a video entry or images related to this topic.
For video creation, please contact our Academic Video Service.
| Version | Summary | Created by | Modification | Content Size | Created at | Operation |
|---|---|---|---|---|---|---|
| 1 | Dean Liu | -- | 1281 | 2022-11-18 01:37:14 |
Video Upload Options
We provide professional Academic Video Service to translate complex research into visually appealing presentations. Would you like to try it?
Cite
If you have any further questions, please contact Encyclopedia Editorial Office.
HandWiki. Czochralski Process. Encyclopedia. Available online: https://encyclopedia.pub/entry/36346 (accessed on 24 September 2026).
HandWiki. Czochralski Process. Encyclopedia. Available at: https://encyclopedia.pub/entry/36346. Accessed September 24, 2026.
HandWiki. "Czochralski Process" Encyclopedia, https://encyclopedia.pub/entry/36346 (accessed September 24, 2026).
HandWiki. (2022, November 24). Czochralski Process. In Encyclopedia. https://encyclopedia.pub/entry/36346
HandWiki. "Czochralski Process." Encyclopedia. Web. 24 November, 2022.
Copy Citation
The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The process is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal. The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman-Stockbarger technique.
single crystal silicon
single crystals
crystal growth
References
- Czochralski Crystal Growth Method. Bbc.co.uk. 30 January 2003. Retrieved on 2011-12-06. https://www.bbc.co.uk/dna/h2g2/A912151
- Aleksic, Jalena et al. (2002). "Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals". Ann. N.Y. Acad. Sci. 972 (1): 158–163. doi:10.1111/j.1749-6632.2002.tb04567.x. Bibcode: 2002NYASA.972..158A. https://dx.doi.org/10.1111%2Fj.1749-6632.2002.tb04567.x
- Doubts over 450mm and EUV. Electronicsweekly.com. December 30, 2013. Retrieved on 2014-01-09. http://www.electronicsweekly.com/news/business/doubts-over-450mm-and-euv-2013-12/
- "Czochralski Process". http://www.theimage.com/newgems/synthetic/syntheticanimate2.html.
- Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A. et al. (1992). "Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors". IEEE Transactions on Nuclear Science 39 (6): 1730. doi:10.1109/23.211360. Bibcode: 1992ITNS...39.1730L. https://digital.library.unt.edu/ark:/67531/metadc1059922/.
- Lindström, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, M.M; Augelli, V et al. (2001). "Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 466 (2): 308. doi:10.1016/S0168-9002(01)00560-5. Bibcode: 2001NIMPA.466..308L. https://dx.doi.org/10.1016%2FS0168-9002%2801%2900560-5
- CERN RD50 Status Report 2004, CERN-LHCC-2004-031 and LHCC-RD-005 and cited literature therein
- Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V et al. (2005). "Particle detectors made of high-resistivity Czochralski silicon". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 541 (1–2): 202–207. doi:10.1016/j.nima.2005.01.057. Bibcode: 2005NIMPA.541..202H. https://dx.doi.org/10.1016%2Fj.nima.2005.01.057
- Custer, J. S.; Polman, A.; Van Pinxteren, H. M. (1994). "Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon". Journal of Applied Physics 75 (6): 2809. doi:10.1063/1.356173. Bibcode: 1994JAP....75.2809C. https://dx.doi.org/10.1063%2F1.356173
- Eikelboom, J.A., Jansen, M.J., 2000. Characterisation of PV modules of new generations; results of tests and simulations . Report ECN-C-00-067, 18. http://www.ecn.nl/docs/library/report/2000/c00067.pdf
- James D. Plummer, Michael D. Deal, and Peter B. Griffin, Silicon VLSI Technology, Prentice Hall, 2000, ISBN:0-13-085037-3 pp. 126–27
More
Information
Subjects:
Others
Contributor
MDPI registered users' name will be linked to their SciProfiles pages. To register with us, please refer to https://encyclopedia.pub/register
:
View Times:
6.7K
Entry Collection:
HandWiki
Revision:
1 time
(View History)
Update Date:
24 Nov 2022
Table of Contents
Notice
You are not a member of the advisory board for this topic. If you want to update advisory board member profile, please contact office@encyclopedia.pub.
OK
Confirm
Only members of the Encyclopedia advisory board for this topic are allowed to note entries. Would you like to become an advisory board member of the Encyclopedia?
Yes
No
${ textCharacter }/${ maxCharacter }
Submit
Cancel
Back
Comments
${ item }
|
${ item.createdUser.fullName }
${ item.createdAt }
${ item.vote }
${ item.reply }
Delete
${ reply.createdUser.fullName }
${ reply.createdAt }
${ reply.vote }
Delete
There is no reply to this comment~
${ item.replyTextCharacter }/${ item.replyMaxCharacter }
Submit
Cancel
More
No more~
There is no comment~
${ textCharacter }/${ maxCharacter }
Submit
Cancel
${ selectedItem.replyTextCharacter }/${ selectedItem.replyMaxCharacter }
Submit
Cancel
Confirm
Are you sure to Delete?
Yes
No