Submitted Successfully!
To reward your contribution, here is a gift for you: A free trial for our video production service.
Thank you for your contribution! You can also upload a video entry or images related to this topic.
Version Summary Created by Modification Content Size Created at Operation
1 + 2441 word(s) 2441 2021-11-30 06:42:31 |
2 corrected the format Meta information modification 2441 2021-12-15 02:23:03 |

Video Upload Options

Do you have a full video?

Confirm

Are you sure to Delete?
Cite
If you have any further questions, please contact Encyclopedia Editorial Office.
Giannazzo, F. Atomic Layer Deposition on 2D Materials. Encyclopedia. Available online: https://encyclopedia.pub/entry/17132 (accessed on 17 April 2024).
Giannazzo F. Atomic Layer Deposition on 2D Materials. Encyclopedia. Available at: https://encyclopedia.pub/entry/17132. Accessed April 17, 2024.
Giannazzo, Filippo. "Atomic Layer Deposition on 2D Materials" Encyclopedia, https://encyclopedia.pub/entry/17132 (accessed April 17, 2024).
Giannazzo, F. (2021, December 15). Atomic Layer Deposition on 2D Materials. In Encyclopedia. https://encyclopedia.pub/entry/17132
Giannazzo, Filippo. "Atomic Layer Deposition on 2D Materials." Encyclopedia. Web. 15 December, 2021.
Atomic Layer Deposition on 2D Materials
Edit

Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al2O3 and HfO2 both on monolayer (1 L) graphene and MoS2. Similarly, uniform ALD growth of Al2O3 on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties.

2D materials graphene MoS2 substrate effect

1. Introduction

Two-dimensional (2D) materials such as semi-metallic graphene and the semiconducting transition metal dicalchogenides (TMDs) have been the object of intensive research investigations in the last 15 years due to their wide range of potential applications in electronics, optoelectronics, and sensing. As an example, the excellent carrier mobility (103–105 cm2/Vs) [1] and micrometer electron mean free path [2] of graphene have been exploited in the demonstration of high-frequency (100–300 GHz) transistors [3][4], for which the low on/off current ratio (due to the lack of an energy bandgap) represents a minor issue. On the other hand, semiconducting TMDs (including MoS2, WS2, MoSe2, and WSe2) are currently regarded as the most suitable channel materials for ultra-thin body field effect transistors to be employed in next-generation logic or switching applications [5][6]. As an example, transistors with high on/off current ratios (106–108) and low subthreshold swings (SS ≈ 70 meV/decade) [7][8] have been fabricated using monolayer (1 L) MoS2 (with a direct bandgap of 1.8 eV) or multilayer MoS2 (with an indirect bandgap of 1.2 eV) [9][10].
Practical implementation of electronic devices based on 2D materials requires their combination with high-κ dielectrics, such as Al2O3, HfO2, and ZrO2. In the case of top-gated field effect transistors with graphene or MoS2 channels, high-κ gate insulators are necessary for efficient electrostatic control of the lateral source-to-drain current while minimizing the gate leakage phenomena [11][12][13]. Furthermore, the encapsulation of the monolayer or multilayers of MoS2 with high-κ dielectrics has been demonstrated to be highly beneficial in the improvement of the field effect mobility up to 200–500 cm2 V−1s−1 due to the efficient reduction of charged impurity scattering [7][8][14]. Obviously, with the scaling down process which invests the electronic field, most of these applications require high-κ dielectrics in the form of uniform and ultra-thin layers. Aside from conventional field effect transistor structures, novel device concepts and architectures also require the integration of high-quality and ultra-thin insulators on the surfaces of 2D materials [15][16]. As an example, the recently investigated graphene-base hot electron transistors (GBHETs) for THz electronics require the integration of an ultra-thin insulator on graphene working as a base collector tunnel barrier for vertical transport [17][18][19]. Furthermore, graphene sensors may involve high-κ deposition on graphene as a functional layer toward specific chemical and biological molecules [20].

2. Atomic Layer Deposition on 2D Materials

The ALD is the most suitable deposition technique for the growth of ultra-thin and conformal dielectric layers on a substrate. The key strength of ALD is related to its peculiar deposition mechanism. It is based on sequential and self-limited chemical reactions between the properly selected chemical precursors and the active sites of the substrate surface, which results in the so-called layer-by-layer growth mode (see Figure 1a). This characteristic principle of growth allows for obtaining uniform, conformal, and pinhole-free depositions with angstrom-level control of the thickness in a large area [21]. However, ALD implementation on a pristine surface of graphene and other 2D materials is a difficult task due to the lack of dangling bonds working as active sites or functional groups for the adsorption of ALD precursors (as depicted in Figure 1b). The main consequence of this feature is a lack of deposition or the formation of inhomogeneous films (e.g., see the image of ALD-Al2O3 on the pristine MoS2 surface in Figure 1c).
Figure 1. (a) Schematic of a typical cycle in ALD growth. (b) Schematic diagram showing the adsorption and desorption processes of a TMA precursor during the ALD deposition of Al2O3 on the 2D materials [22]. (c) AFM image of the ALD-Al2O3 layer deposited on a pristine MoS2 surface [23].

2.1. Methods to Promote ALD Growth on 2D Materials

To date, a wide variety of processes has been reported to promote ALD nucleation on 2D layered materials, which finally results in the deposition of uniform dielectric layers. Table 1 reports a selection of the literature results for different types of 2D materials, with the indication of the used surface activation for ALD, the deposited high-κ insulator, its thickness and uniformity, and eventual damage introduced in the 2D material by the ALD process.
Table 1. ALD deposition of high-κ dielectrics on 2D materials.
Ref 2D Material ALD Process
ALD Activation TALD (°C) High-κ Type Uniformity 2D Damage
  Seed layer deposition  
[24] CVD-graphene on SiO2 3,4,9,10-perylene tetracarboxylic acid (PTCA) 100 °C Al2O3, ~2 nm High Not
[25] CVD-graphene on SiO2 Poly(4-vinylphenol) (PVP) ------ Al2O3, 20 nm High Not
[26] CVD-MoS2 and CVD-WS2 Perylene bisimide 80 °C Al2O3, ~3 nm High Not
[27] Exfoliated graphene Evaporated Al 250 °C Al2O3, ~3 nm High for seed layer > 1.2 nm Not
[28][29] CVD-MoS2 Al 150 °C ZrO2, ~15 nm High Not
[30] MoS2 by sulfurization of Mo SiO2 nanoparticles 300 °C Al2O3, 5.7 nm
HfO2, 2.8 nm
High Not
[31] Exfoliated graphene Seed layer of H2O-assisted dielectric at low temperature (100 °C) 100 °C Al2O3, ~11 nm High Not
[32] Transferred CVD-graphene on SiO2 Seed layer of H2O-assisted dielectric at low temperature (100 °C) 250 °C Al2O3, ~22 nm High Not
[33] Exfoliated MoS2 Seed layer of H2O-assisted dielectric at low temperature (80 °C) 180°C Al2O3, <10 nm High Not
[34] Exfoliated WS2 Evaporated Al 95 °C HfO2, ~20 nm High Not
    Chemical
functionalization
       
[35] Exfoliated graphene NO2 250 °C Al2O3, ~12 nm High Current and mobility degradation
[36] Exfoliated graphene O3 (25–200 °C) 200 °C Al2O3, ~15 nm High Significant defect amount during O3 treatment at 200 °C
[23] Exfoliated MoS2 O3 (30°) 200 °C Al2O3, ~5 nm High Not
[37][38] HOPG O3 (25°) 200 °C Al2O3, ~10 nm High Damage to 2D crystal
[39] Exfoliated MoSe2, WSe2 UV-O3 200 °C HfO2, ~4 nm High on MoSe2
Low on WSe2
Partial etching of the 2D layers
[40] Exfoliated MoS2 O2-plasma 250 °C Al2O3, ~10 nm
HfO2, ~10 nm
High MoS2 oxidation
[41] Transferred CVD-graphene O2-plasma 100 °C Al2O3, ~10 nm High Significant amount of defects
[42] Exfoliated graphene N2-plasma ------ Al2O3, ~28 nm High Significant amount of defects and reduced conductivity
    ALD parameter
tuning
       
[43] Exfoliated graphene Low-temperature ALD process 80–150 °C Al2O3 High (98%) at 80 °C Not
[22] Exfoliated MoS2, WS2, WSe2, h-BN Low-temperature ALD process 150 °C Al2O3, 1, 10 nm Variable as the 2D polarizability (WSe2 < WS2 < MoS2 < h-BN) Not
[44] Exfoliated HOPG and MoS2 Low-temperature ALD process 50 °C Al2O3, few nm High Not
[43] CVD graphene on Cu Long or multiple precursor pulses 200 °C Al2O3, few nm Variable Not
From the historical point of view, most of these approaches have been developed for graphene [25][27][45][46], and many of them have been adapted to other layered materials, such as TMDs [26]. These processes can be grouped into two categories:
(i)
Predeposition of a seed-layer;
(ii)
Chemical pre-functionalization.
The seed layers can be of both an organic nature, such as self-assembled monolayers (SAM) [24][47] or spin-coated polymers layers [25][26][45], and an inorganic nature, such as sputtered or evaporated metal or metal oxide films [27][28][29][46] or SiO2 nanoparticles [30]. They can be pre-deposited “ex situ” (i.e., outside the ALD reactor chamber) and also “in situ” (i.e., within the reactor), like in the case of low temperature H2O-assisted dielectric seed layer growth on the surface of graphene [31][32].
The seed layer approach proved to be an efficient and widely used method to promote the subsequent ALD growth process on graphene and TMDs. Typically, the spin-coating, self-assembling, and physical deposition methods (e.g., evaporation) used to deposit seed layers result in limited damage to the 2D membranes. However, from the electrical point of view, poor interface quality between the seed layer and 2D materials can result in a high-density interface or near-interface traps, ultimately compromising the performances of the final device. On the other hand, the metal seed layer deposition has been found to be beneficial for protecting the structural and electrical properties of the 2D material from the following ALD process. In particular, recent reports on the ALD deposition of ZrO2 on MoS2 [28][29] demonstrated that the Al seed layer reduces the oxidation effect of the 2D material by the co-reactant (H2O, O3) during the ALD process, mainly for the O3-based method. Moreover, the introduction of a seed layer limits the minimum achievable thickness of the high-κ film, and this can represent a serious concern for the downscaling of 2D material-based transistors.
Chemical pretreatments of a 2D material surface, such as exposure to NO2 [35], O3 [23][36][37][38] or O2-plasma [40][41], and N2-plasma [42], introduce functional groups or dangling bonds, enabling the ALD nucleation and growth of high-κ dielectrics. These approaches allow, in principle, the growth of ultra-thin insulating films, but at the same time, they can introduce defects in the 2D layer, degrading its electronic properties.
Aside from the seeding layer and chemical pretreatments, the ALD process conditions (e.g., the deposition temperature and the pulse and purge times) can play a key role in achieving uniform coverage of a 2D material’s surface. ALD depositions of Al2O3 or HfO2 are typically carried out in a temperature window from 200 to 300 °C, which ensures the optimal reaction of the precursors. However, lower deposition temperatures allow higher physisorption of the precursors on the graphene or TMD surface, improving ALD nucleation [22][31][43]. As an example, Aria et al. [43] demonstrated improved coverage and uniformity of deposited films on graphene within a temperature window of 80–100 °C for both Al2O3 and HfO2 materials. In particular, optimized ALD coverage (up to 98%) was demonstrated using prolonged pulse times (>2 s) [43].
Recently, Park et al. [22] reported a systematic study on the thermal ALD of Al2O3 on the surface of multilayers of TMDs (MoS2, WS2, and WSe2) using different deposition temperatures (see Figure 2). Inhomogeneous Al2O3 layers (with a large density of pinholes) were obtained using the conventional temperatures of 200–250 °C, whereas uniform coverage was observed when lowering Tdep to 150 °C. Furthermore, at the same deposition temperature, better uniformity of the deposited Al2O3 (~10 nm) films was observed on WSe2 and on WS2 than on MoS2. This was ascribed to the larger polarizability of the W-and Se-based TMDs, giving rise to a higher adsorption energy of the TMA precursor due to electrostatic interaction.
Figure 2. AFM images and height line profiles of ALD Al2O3 films deposited on (ad) MoS2, (eh) WS2, and (il) WSe2 multilayer samples at different temperatures (150, 200, and 250 °C). Images adapted with permission from [22], copyright the Royal Society of Chemistry, 2017.
A two-step ALD process with early low-temperature (80 °C) deposition of an ultra-thin AlOx layer and a following deposition at a higher temperature (180 °C) was also recently employed to obtain a homogeneous Al2O3 film with a <10 nm total thickness on MoS2 [33]. The low temperature, however, can be responsible for the degradation of the dielectric quality due to the reduced reactivity of the ALD precursor. In these conditions, the insulating films are generally characterized by a lower density and, consequently, by a lower dielectric constant [48].

2.2. Electrical Behavior and Interface Quality of High-κ Dielectrics by ALD on 2D Materials

The quality of grown high-κ dielectrics and of their interface with the 2D material strongly influences the electrical performances of the final devices. The seed layer deposition, typically carried out ex situ, can introduce impurities and particles, which act as charge traps compromising the reliability of the high-κ dielectrics subsequently grown by ALD. Fallahazad et al. explained that the HfO2 deposited on graphene by the evaporated Al seed layer presents a relatively low permittivity (ε = 5.5) and a low-quality interface, which is characterized by impurities and defects responsible for mobility degradation [27][49]. Alternatively, a method based on the in situ deposition of a metal oxide H2O-assisted seed layer has been proposed [31][32]. This approach involves the physical adsorption (by Van Der Walls interactions) of a continuous layer of H2O molecules, which acts as a site of nucleation for a seed layer of high-κ dielectrics at a low temperature (100 °C), followed by conventional deposition at 200–250°C. Fisichella et al. [32] demonstrated that this approach ensures the optimal electrical features of the deposited dielectric on graphene, with a favorable permittivity (ε = 7.45) and breakdown field (EBD = 7.4 MV/cm). On the other hand, significant charge trapping at the Al2O3/graphene interface has been observed during the operation of top-gated field effect transistors (Figure 3a). In particular, the density of negative trapped charges up to ~4 × 1012 cm−2 was evaluated by capacitance voltage (C-VTG) measurements when increasing the forward and backward gate bias sweeps (Figure 3b,c).
Figure 3. (a) Schematic of a top-gated graphene transistor with an ALD Al2O3 gate dielectric. (b) Capacitance voltage (C-VTG) measurements performed by sweeping VTG from negative to positive values and back using a progressively increasing sweep range. (c) Dirac point position (left axis) as a function of the bias sweep range for the forward and backward sweep and the evaluated density Not of the trapped negative charges by near-interface oxide traps (right axis). Images adapted with permission from [32], copyright American Chemical Society, 2017.
Additionally, high-κ layers grown on 2D materials pre-functionalized by reactive gas species are subjected to charge trapping phenomena both at the interface and inside the dielectrics. As an example, the HfO2 top gate dielectric grown on a MoS2 surface after UV-O3 treatment [50] shows significant charge trapping, which can be ascribed to impurities and defects generated during the reactive gas exposure. Additionally, O2-plasma pretreatments have been shown to have an effect on the interfacial properties and, consequently, the performance of the dielectric [41][42]. As an example, Zhou et al. [51] demonstrated that remote O2-plasma is effective for the ALD growth of Al2O3 on graphene, but on the other hand, they found the formation of a defective interfacial layer, resulting in a low breakdown field for the oxide (1.2 MV/cm). As previously discussed, the temperature used during the ALD process plays an important role in the uniformity of the dielectric coverage. In particular, as demonstrated in [22][43][44], growth temperatures lower than 150 °C allow for achieving better uniformity, but at the same time, they result in a significant increase of trapping phenomena and, consequently, a degradation of the passivation degree [50][52].

References

  1. Du, X.; Skachko, I.; Barker, A.; Aandrei, E.Y. Approaching ballistic transport in suspended graphene. Nat. Nanotechnol. 2008, 3, 491.
  2. Giannazzo, F.; Sonde, S.; Lo Nigro, R.; Rimini, E.; Raineri, V. Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene. Nano Lett. 2011, 11, 4612–4618.
  3. Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K.A.; Farmer, D.B.; Chiu, H.-Y.; Grill, A.; Avouris, P. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene. Science 2010, 327, 662.
  4. Moon, J.S.; Curtis, D.; Hu, M.; Wong, D.; McGuire, C.; Campbell, P.M.; Jernigan, G.; Tedesco, J.L.; VanMil, B.; Myers-Ward, R.; et al. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates. IEEE Electron Device Lett. 2009, 30, 650–652.
  5. Liu, H.; Neal, A.T.; Ye, P.D. Channel Length Scaling of MoS2 MOSFETs. ACS Nano 2012, 6, 8563–8569.
  6. Liu, Y.; Guo, J.; Wu, Y.; Zhu, E.; Weiss, N.O.; He, Q.; Wu, H.; Cheng, H.-C.; Xu, Y.; Shakir, I.; et al. Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors. Nano Lett. 2016, 16, 6337–6342.
  7. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.
  8. Kim, S.; Konar, A.; Hwang, W.S.; Lee, J.H.; Lee, J.; Yang, J.; Jung, C.; Kim, H.; Yoo, J.B.; Choi, J.Y.; et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 2012, 3, 1011.
  9. Mak, K.F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T.F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
  10. Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C.-Y.; Galli, G.; Wang, F. Emerging Photoluminescence in Monolayer MoS2. Nano Lett. 2010, 10, 1271–1275.
  11. Reddy, D.; Register, L.F.; Carpenter, G.D.; Banerjee, S.K. Graphene Field-Effect Transistors. J. Phys. D Appl. Phys. 2011, 45, 019501.
  12. Echtermeyer, T.J.; Lemme, M.C.; Baus, M.; Szafranek, B.N.; Geim, A.K.; Kurz, H. Non-volatile switching in graphene field effect devices. IEEE Electron Device Lett. 2008, 29, 29952–29954.
  13. Fisichella, G.; Lo Verso, S.; Di Marco, S.; Vinciguerra, V.; Schilirò, E.; Di Franco, S.; Lo Nigro, R.; Roccaforte, F.; Zurutuza, A.; Centeno, A.; et al. Advances in the fabrication of graphene transistors on flexible substrates. Beilstein J. Nanotechnol. 2017, 8, 467–474.
  14. Liu, H.; Ye, P.D. MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric. IEEE Electron Device Lett. 2011, 33, 546–548.
  15. Giannazzo, F.; Greco, G.; Roccaforte, F.; Sonde, S.S. Vertical Transistors Based on 2D Materials: Status and Prospects. Crystals 2018, 8, 70.
  16. Giannazzo, F. Engineering 2D heterojunctions with dielectrics. Nat. Electron. 2019, 2, 54.
  17. Giannazzo, F.; Fisichella, G.; Greco, G.; Schilirò, E.; Deretzis, I.; Lo Nigro, R.; La Magna, A.; Roccaforte, F.; Iucolano, F.; Lo Verso, S.; et al. Cordier, Fabrication and Characterization of Graphene Heterostructures with Nitride semiconductors for High Frequency Vertical Transistors. Phys. Status Solidi 2017, 215, 1700653.
  18. Giannazzo, F.; Greco, G.; Schilirò, E.; Lo Nigro, R.; Deretzis, I.; La Magna, A.; Roccaforte, F.; Iucolano, F.; Ravesi, S.; Frayssinet, E.; et al. High-performance graphene/AlGaN/GaN schottky junctions for hot electron transistors. ACS Appl. Electron. Mater. 2019, 1, 2342–2354.
  19. Mehr, W.; Dabrowski, J.; Scheytt, J.C.; Lippert, G.; Xie, Y.H.; Lemme, M.C.; Ostling, M.; Lupina, G. Vertical Graphene Base Transistor. IEEE Electron Device Lett. 2012, 33, 691–693.
  20. Bae, T.-E.; Kim, H.; Jung, J.; Cho, W.-J. Fabrication of high-performance graphene field-effect transistor with solution-processed Al2O3 sensing membrane. Appl. Phys. Lett. 2014, 104, 153506.
  21. Oviroh, P.O.; Akbarzadeh, R.; Pan, D.; Coetzee, R.A.M.; Jen, T.-C. New development of atomic layer deposition: Processes, methods and applications. Sci. Technol. Adv. Mater. 2019, 20, 465–496.
  22. Park, T.; Kim, H.; Leem, M.; Ahn, W.; Choi, S.; Kim, J.; Uh, J.; Kwon, K.; Jeong, S.-J.; Park, S.; et al. Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: Surface coverage and adsorption energy. RSC Adv. 2017, 7, 884–889.
  23. Cheng, L.; Qin, X.; Lucero, A.T.; Azcatl, A.; Huang, J.; Wallace, R.M.; Cho, K.; Kim, J. Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone. ACS Appl. Mater. Interfaces 2014, 6, 11834–11838.
  24. Wang, X.; Tabakman, S.M.; Dai, H. Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene. J. Am. Chem. Soc. 2008, 130, 8152.
  25. Shin, W.C.; Kim, T.Y.; Sul, O.; Cho, B.J. Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability. Appl. Phys. Lett. 2012, 101, 033507.
  26. Wirtz, C.; Hallam, T.; Cullen, C.P.; Berner, N.C.; O’Brien, M.; Marcia, M.; Hirsch, A.; Duesberg, G.S. Atomic layer deposition on 2D transition metal chalcogenides: Layer dependent reactivity and seeding with organic ad-layers. Chem. Commun. 2015, 51, 16553.
  27. Fallahazad, B.; Lee, K.; Lian, G.; Kim, S.; Corbet, C.; Ferrer, D.; Colombo, L.; Tutuc, E. Scaling of Al2O3 dielectric for graphene field-effect transistors. Appl. Phys. Lett. 2012, 100, 093112.
  28. Guo, T.; Wu, H.; Su, X.; Guo, B.; Liu, C. Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics. J. Alloy. Compd. 2021, 871, 159116.
  29. Woo, W.J.; Oh, I.K.; Park, B.E.; Kim, Y.; Park, J.; Seo, S.; Song, J.-G.; Jung, H.; Kim, D.; Lim, J.H.; et al. Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition. 2D Mater. 2019, 6, 015019.
  30. Haodong, Z.; Arutchelvan, G.; Meersschaut, J.; Gaur, A.; Conard, T.; Bender, H.; Lin, D.; Asselberghs, I.; Heyns, M.; Radu, I.; et al. MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics. Chem. Mater. 2017, 29, 6772–6780.
  31. Zhang, Y.; Qiu, Z.; Cheng, X.; Xie, H.; Wang, H.; Xie, X.; Yu, Y.; Liu, R. Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD. J. Phys. D Appl. Phys. 2014, 47, 055106.
  32. Fisichella, G.; Schilirò, E.; Di Franco, S.; Fiorenza, P.; Lo Nigro, R.; Roccaforte, F.; Ravesi, S.; Giannazzo, F. Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer. ACS Appl. Mater. Interfaces 2017, 9, 7761–7771.
  33. Lin, Y.-S.; Cheng, P.-H.; Huang, K.-W.; Lin, H.-C.; Chen, M.-J. Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization. Appl. Surf. Sci. 2018, 443, 421–428.
  34. Gong, F.; Luo, W.; Wang, J.; Wang, P.; Fang, H.; Zheng, D.; Guo, N.; Wang, J.; Luo, M.; Ho, J.C.; et al. High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2. Adv. Funct. Mater. 2016, 26, 6084–6090.
  35. Lin, Y.M.; Jenkins, K.A.; Valdes-Garcia, A.; Small, J.P.; Farmer, D.B.; Avouris, P. Operation of Graphene Transistors at Gigahertz Frequencies. Nano Lett. 2009, 9, 422.
  36. Lee, B.; Mordi, G.; Kim, M.J.; Chabal, Y.J.; Vogel, E.M.; Wallace, R.M.; Cho, K.J.; Colombo, L.; Kim, J. Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices. J. Appl. Phys. Lett. 2010, 97, 043107.
  37. Lee, J.; Lee, B.; Kim, J.; Cho, K. Ozone Adsorption on Graphene: Ab Initio Study and Experimental Validation. J. Phys. Chem. C 2009, 113, 14225.
  38. Lee, B.; Park, S.Y.; Kim, H.C.; Cho, K.; Vogel, E.M.; Kim, M.J.; Wallace, R.M.; Kim, J. Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics. J. Appl. Phys. Lett. 2008, 92, 203102.
  39. Azcatl, A.; Santosh, K.C.; Peng, X.; Lu, N.; McDonnell, S.; Qin, X.; de Dios, F.; Addou, R.; Kim, J.; Kim, M.J.; et al. HfO2 on UV-O3 Exposed Transition Metal Dichalcogenides: Interfacial Reactions Study. 2D Mater. 2015, 2, 014004.
  40. Yang, J.; Kim, S.; Choi, W.; Park, S.H.; Jung, Y.; Cho, M.-H.; Kim, H. Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment. ACS Appl. Mater. Interfaces 2013, 5, 4739–4744.
  41. Nayfeh, O.M.; Marr, T.; Dubey, M. Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors. IEEE Electron Device Lett. 2011, 32, 473–475.
  42. Lim, T.; Kim, D.; Ju, S. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment. Appl. Phys. Lett. 2013, 113, 013107.
  43. Aria, A.I.; Nakanishi, K.; Xiao, L.; Braeuninger-Weimer, P.; Sagade, A.A.; Alexander-Webber, J.A.; Hofmann, S. Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene. ACS Appl. Mater. Interfaces 2016, 8, 30564.
  44. Kwak, I.; Kavrik, M.; Park, J.H.; Grissom, L.; Fruhberger, B.; Wong, K.T.; Kang, S.; Kummel, A.C. Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition. Appl. Surf. Sci. 2019, 463, 758–766.
  45. Kitzmann, J.; Göritz, A.; Fraschke, M.; Lukosius, M.; Wenger, C.; Wolff, A.; Lupina, G. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene. Sci. Rep. 2016, 6, 29223.
  46. Farmer, D.B.; Chiu, H.-Y.; Lin, Y.-M.; Jenkins, K.A.; Xia, F.; Avouris, P. Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors. Nano Lett. 2009, 9, 4474.
  47. Kim, S.; Nah, J.; Jo, I.; Shahrjerdi, D.; Colombo, L.; Yao, Z.; Tutuc, E.; Banerjee, S.K. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric. Appl. Phys. Lett. 2009, 94, 062107.
  48. Iraiwa, A.; Matsumura, D.; Kawarada, H. Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant. J. Appl. Phys. 2016, 120, 084504.
  49. Fallahazad, B.; Kim, S.; Colombo, L.; Tutuc, E. Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric. Appl. Phys. Lett. 2010, 97, 123105.
  50. Zhao, P.; Khosravi, A.; Azcatl, A.; Bolshakov, P.; Mirabelli, G.; Caruso, E.; Hinkle, C.L.; Hurley, P.K.; Wallace, R.M.; Young, C.D. Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis. 2D Mater. 2018, 5, 031002.
  51. Zhou, P.; Yang, S.; Sun, Q.; Chen, L.; Wang, P.; Ding, S.; Zhang, D.W. Direct Deposition of Uniform High-k Dielectrics on Graphene. Sci. Rep. 2014, 4, 6448.
  52. Dingemans, G.; van de Sanden, M.C.M.; Kessels, W.M.M. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD. Electrochem. Solid-State Lett. 2010, 13, H76.
More
Information
Subjects: Chemistry, Applied
Contributor MDPI registered users' name will be linked to their SciProfiles pages. To register with us, please refer to https://encyclopedia.pub/register :
View Times: 713
Revisions: 2 times (View History)
Update Date: 15 Dec 2021
1000/1000