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HandWiki. Chemical Beam Epitaxy. Encyclopedia. Available online: https://encyclopedia.pub/entry/37179 (accessed on 23 September 2026).
HandWiki. Chemical Beam Epitaxy. Encyclopedia. Available at: https://encyclopedia.pub/entry/37179. Accessed September 23, 2026.
HandWiki. "Chemical Beam Epitaxy" Encyclopedia, https://encyclopedia.pub/entry/37179 (accessed September 23, 2026).
HandWiki. (2022, November 30). Chemical Beam Epitaxy. In Encyclopedia. https://encyclopedia.pub/entry/37179
HandWiki. "Chemical Beam Epitaxy." Encyclopedia. Web. 30 November, 2022.
Chemical Beam Epitaxy
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The content is sourced from: https://handwiki.org/wiki/Chemistry:Chemical_beam_epitaxy

Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term CBE is often used interchangeably with metal-organic molecular beam epitaxy (MOMBE). The nomenclature does differentiate between the two (slightly different) processes, however. When used in the strictest sense, CBE refers to the technique in which both components are obtained from gaseous sources, while MOMBE refers to the technique in which the group III component is obtained from a gaseous source and the group V component from a solid source.

molecular beam epitaxy epitaxial growth epitaxy

References

  1. Tsang, W. T. (1984). "Chemical beam epitaxy of InP and GaAs". Applied Physics Letters (AIP Publishing) 45 (11): 1234–1236. doi:10.1063/1.95075. ISSN 0003-6951.  https://dx.doi.org/10.1063%2F1.95075
  2. Tsang, W.T. (1987). "Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices". Journal of Crystal Growth (Elsevier BV) 81 (1-4): 261–269. doi:10.1016/0022-0248(87)90402-7. ISSN 0022-0248.  https://dx.doi.org/10.1016%2F0022-0248%2887%2990402-7
  3. Tsang, W.T. (1989). "From chemical vapor epitaxy to chemical beam epitaxy". Journal of Crystal Growth (Elsevier BV) 95 (1-4): 121–131. doi:10.1016/0022-0248(89)90364-3. ISSN 0022-0248.  https://dx.doi.org/10.1016%2F0022-0248%2889%2990364-3
  4. Lüth, Hans (1994). "Chemical beam epitaxy — a child of surface science". Surface Science 299-300: 867–877. doi:10.1016/0039-6028(94)90703-X. ISSN 0039-6028.  https://dx.doi.org/10.1016%2F0039-6028%2894%2990703-X
  5. Benchimol, Jean-Louis; Alexandre, F.; Lamare, Bruno; Legay, Philippe (1996). "Benefits of chemical beam epitaxy for micro and optoelectronic applications". Progress in Crystal Growth and Characterization of Materials (Elsevier BV) 33 (4): 473–495. doi:10.1016/s0960-8974(96)00091-5. ISSN 0960-8974.  https://dx.doi.org/10.1016%2Fs0960-8974%2896%2900091-5
  6. G. Benvenuti,Large area deposition in high vacuum with high thickness uniformity. WO_2003093529_A2[1].
  7. M.A. Herman and H. Sitter. Molecular Beam Epitaxy. Heidelberg: Springer, 1996.
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