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HandWiki. Plasma-Enhanced Chemical Vapor Deposition. Encyclopedia. Available online: https://encyclopedia.pub/entry/35260 (accessed on 25 September 2026).
HandWiki. Plasma-Enhanced Chemical Vapor Deposition. Encyclopedia. Available at: https://encyclopedia.pub/entry/35260. Accessed September 25, 2026.
HandWiki. "Plasma-Enhanced Chemical Vapor Deposition" Encyclopedia, https://encyclopedia.pub/entry/35260 (accessed September 25, 2026).
HandWiki. (2022, November 18). Plasma-Enhanced Chemical Vapor Deposition. In Encyclopedia. https://encyclopedia.pub/entry/35260
HandWiki. "Plasma-Enhanced Chemical Vapor Deposition." Encyclopedia. Web. 18 November, 2022.
Plasma-Enhanced Chemical Vapor Deposition
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Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.

thin films plasma vapor deposition

References

  1. "First-Hand:The Birth of Glow Discharge Chemistry (aka PECVD) - Engineering and Technology History Wiki" (in en). 17 March 2015. http://ethw.org/First-Hand:The_Birth_of_Glow_Discharge_Chemistry_(aka_PECVD). 
  2. Sterling and Swann. "Perfectionnements aux méthodes de formation de couches" (in en). https://bases-brevets.inpi.fr/en/document-en/FR1442502/publications.html. 
  3. Sterling and Swann, Improvements in or relating to a method of forming a layer of an inorganic compound, https://patents.google.com/patent/GB1104935A/en 
  4. Sterling and Swann, Method of forming silicon oxide coatings in an electric discharge, https://patents.google.com/patent/US3655438A/en 
  5. Sterling, H.F; Swann, R.C.G (1965-08-01). "Chemical vapour deposition promoted by r.f. discharge" (in en). Solid-State Electronics 8 (8): 653–654. doi:10.1016/0038-1101(65)90033-X. ISSN 0038-1101. Bibcode: 1965SSEle...8..653S.  https://dx.doi.org/10.1016%2F0038-1101%2865%2990033-X
  6. Ay and Aydinli. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides. Optical Materials (2004) vol. 26 (1) pp. 33-46
  7. Albers et al. Reduction of hydrogen induced losses in PECVD-SiOxNy optical waveguides in the near infrared. Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE (1995) vol. 2 pp. 88-89 vol. 2
  8. G. Tellez et al., INFRARED CHARACTERIZATION OF SiN FILMS ON Si FOR HIGH SPEED ELECTRONICS APPLICATIONS. MASTER OF SCIENCE IN APPLIED PHYSICS, Naval Postgraduate School, Monterey, California, USA (2004)
  9. El amrani, A.; Menous, I.; Mahiou, L.; Tadjine, R.; Touati, A.; Lefgoum, A. (2008-10-01). "Silicon nitride film for solar cells". Renewable Energy 33 (10): 2289–2293. doi:10.1016/j.renene.2007.12.015.  https://dx.doi.org/10.1016%2Fj.renene.2007.12.015
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