The CVD method is one of the traditional methods for the preparation of large-area nanofilm materials
[26]. After decades of technical innovation, it is considered a mature technology for preparing 2D nanofilm materials
[27][28]. The preparation process involves placing the growth base in a CVD tubular furnace, passing it through the precursor gas and allowing it to react on the surface of the substrate
[29]. In preparing MoS
2 nanosheet films by the CVD method, Mo is first sputtered on SiO
2 substrate, then MoS
2 nanometer-thin films are grown on the surface through the reaction between Mo and sulfur vapor in the furnace. The size and thickness of the MoS
2 substrate can be modulated artificially by altering the thickness of Mo metal films. Zhan and colleagues
[30] used this method to deposit Mo on the SiO
2 substrate surface and fabricated a MoS
2 thin-film layer by heating sulfur powder and reacting with Mo at a high temperature. Zheng et al.
[31] used electrochemically oxidized Mo foil as a growth material to achieve layer-by-layer growth of MoS
2 by rapid sulfidation of Mo oxides in the gas phase.