Layer-Scale Transfer Techniques: Comparison
View Latest Version
Please note this is a comparison between Version 2 by Camila Xu and Version 1 by Zheng Gong.

Layer transfer is a technique to transfer a layer of a particular semiconductor material, often of a wafer-scale size, from the original substrate to the target substrate of interest.

  • layer transfer
  • chip transfer
  • hetero-integration
Please wait, diff process is still running!

References

  1. Lee, K.; Zimmerman, J.D.; Xiao, X.; Sun, K.; Forrest, S.R. Reuse of GaAs substrates for epitaxial lift-off by employing protection layers. J. Appl. Phys. 2012, 111, 033527.
  2. van Geelen, A.; Hageman, P.R.; Bauhuis, G.J.; van Rijsingen, P.C.; Schmidt, P.; Giling, L.J. Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate. Mater. Sci. Eng. B 1997, 45, 162–171.
  3. Cheng, C.-W.; Shiu, K.-T.; Li, N.; Han, S.-J.; Shi, L.; Sadana, D.K. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nat. Commun. 2013, 4, 1577.
  4. Bruel, M. Silicon on insulator material technology. Electron. Lett. 1995, 31, 1201.
  5. Wang, C.A.; Shiau, D.A.; Murphy, P.G.; O’Brien, P.W.; Huang, R.K.; Connors, M.K.; Anderson, A.C.; Donetsky, D.; Anikeev, S.; Belenky, G.; et al. Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices. J. Electron. Mater. 2004, 33, 213–217.
  6. Kasai, S.; Tanabashi, A.; Kajiki, K.; Itsuji, T.; Kurosaka, R.; Yoneyama, H.; Yamashita, M.; Ito, H.; Ouchi, T. Micro Strip Line-Based On-Chip Terahertz Integrated Devices for High Sensitivity Biosensors. Appl. Phys. Express 2009, 2, 062401.
  7. Liang, D.; Fang, A.; Oakley, D.; Napoleone, A.; Chapman, D.; Chen, C.-L.; Juodawlkis, P.; Raday, O.; Bowers, J.E. 150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits. ECS Trans. 2019, 16, 235–241.
  8. Hwang, D.; Yonkee, B.P.; Addin, B.S.; Farrell, R.M.; Nakamura, S.; Speck, J.S.; DenBaars, S. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Opt. Express 2016, 24, 22875–22880.
  9. Cao, D.; Xiao, H.; Gao, Q.; Yang, X.; Luan, C.; Mao, H.; Liu, J.; Liu, X. Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers. Nanoscale 2017, 9, 11504–11510.
  10. Chan, L.; Karmstrand, T.; Chan, A.; Shapturenka, P.; Hwang, D.; Margalith, T.; DenBaars, S.P.; Gordon, M.J. Fabrication and chemical lift-off of sub-micron scale III-nitride LED structures. Opt. Express 2020, 28, 35038–35046.
  11. Chan, L.; Shapturenka, P.; Pynn, C.D.; Margalith, T.; DenBaars, S.P.; Gordon, M.J. Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN. Appl. Phys. Lett. 2020, 117, 021104.
  12. Chang, T.H.; Xiong, K.; Park, S.H.; Yuan, G.; Ma, Z.; Han, J. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs. Sci. Rep. 2017, 7, 6360.
  13. Chen, D.; Han, J. High reflectance membrane-based distributed Bragg reflectors for GaN photonics. Appl. Phys. Lett. 2012, 101, 221104.
  14. Chen, D.; Xiao, H.; Han, J. Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism. J. Appl. Phys. 2012, 112, 064303.
  15. Chen, J.; Cheng, H.; Zhang, S.; Lan, F.; Qi, C.; Xu, Y.; Wang, Z.; Li, J.; Lai, Z. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE. J. Electron. Mater. 2016, 45, 4782–4789.
  16. Cheng, C.-H.; Huang, T.-W.; Wu, C.-L.; Chen, M.K.; Chu, C.H.; Wu, Y.-R.; Shih, M.-H.; Lee, C.-K.; Kuo, H.-C.; Tsai, D.P.; et al. Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates. J. Mater. Chem. C 2017, 5, 607–617.
  17. Cho, C.-Y.; Lee, S.-J.; Hong, S.-H.; Park, S.-C.; Park, S.-E.; Park, Y.; Park, S.-J. Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching. Appl. Phys. Express 2011, 4.
  18. Choi, J.H.; Cho, E.H.; Lee, Y.S.; Shim, M.-B.; Ahn, H.Y.; Baik, C.-W.; Lee, E.H.; Kim, K.; Kim, T.-H.; Kim, S.; et al. Fully Flexible GaN Light-Emitting Diodes through Nanovoid-Mediated Transfer. Adv. Opt. Mater. 2014, 2, 267–274.
  19. Choi, W.; Kim, C.Z.; Kim, C.S.; Heo, W.; Joo, T.; Ryu, S.Y.; Kim, H.; Kim, H.; Kang, H.K.; Jo, S. A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells. Adv. Energy Mater. 2014, 4, 1400589.
  20. Chuang, S.-H.; Pan, C.-T.; Shen, K.-C.; Ou, S.-L.; Wuu, D.-S.; Horng, R.-H. Thin Film GaN LEDs Using a Patterned Oxide Sacrificial Layer by Chemical Lift-Off Process. IEEE Photonics Technol. Lett. 2013, 25, 2435–2438.
  21. Chung, J.W.; Piner, E.L.; Palacios, T. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology. IEEE Electron Device Lett. 2009, 30, 113–116.
  22. Chyi, J.-I.; Fujioka, H.; Morkoç, H.; Nanishi, Y.; Schwarz, U.T.; Shim, J.-I.; Bayram, C. InGaN-based flexible light emitting diodes. In Proceedings of the Gallium Nitride Materials and Devices XII, San Francisco, CA, USA, 16 February 2017.
  23. Dong, J.; Wang, B.; Zou, X.; Zhao, W.; He, C.; He, L.; Wang, Q.; Chen, Z.; Li, S.; Zhang, K.; et al. Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off. Nano Energy 2020, 78, 105404.
  24. ElAfandy, R.T.; Majid, M.A.; Ng, T.K.; Zhao, L.; Cha, D.; Ooi, B.S. Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes. Adv. Funct. Mater. 2014, 24, 2305–2311.
  25. Englhard, M.; Klemp, C.; Behringer, M.; Rudolph, A.; Skibitzki, O.; Zaumseil, P.; Schroeder, T. Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth. J. Appl. Phys. 2016, 120, 045301.
  26. Englhard, M.; Reuters, B.; Michaelis, F.B.; Behringer, M.; Sundgren, P.; Klemp, C.; Skibitzki, O.; Schroeder, T. A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production. Mater. Sci. Semicond. Process. 2017, 71, 389–395.
  27. George, T.; Logeeswaran, V.J.; Islam, M.S.; Goodwin, J.; Katzenmeyer, A.M.; Dutta, A.K.; Islam, M.S. Heterogeneous 3D integration of multi-spectral photonic sensor with highly oriented micro/nano-pillars of semiconductors. In Proceedings of the Micro and Nanotechnology Sensors, Systems, and Applications, Orlando, FL, USA, 11 May 2009.
  28. Geum, D.M.; Kim, S.; Kim, S.K.; Kang, S.; Kyhm, J.; Song, J.; Choi, W.J.; Yoon, E. Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems. Sci. Rep. 2019, 9, 18661.
  29. Glavin, N.R.; Chabak, K.D.; Heller, E.R.; Moore, E.A.; Prusnick, T.A.; Maruyama, B.; Walker, D.E., Jr.; Dorsey, D.L.; Paduano, Q.; Snure, M. Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices. Adv. Mater. 2017, 29, 1701838.
  30. Ha, J.-S.; Lee, S.W.; Lee, H.-J.; Lee, H.-J.; Lee, S.H.; Goto, H.; Kato, T.; Fujii, K.; Cho, M.W.; Yao, T. The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process. IEEE Photonics Technol. Lett. 2008, 20, 175–177.
  31. Hsieh, C.; Chen, H.-S.; Liao, C.-H.; Chen, C.-Y.; Lin, C.-H.; Lin, C.-H.; Ting, S.-Y.; Yao, Y.-F.; Chen, H.-T.; Kiang, Y.-W.; et al. Photoelectrochemical Liftoff of Patterned Sapphire Substrate for Fabricating Vertical Light-Emitting Diode. IEEE Photonics Technol. Lett. 2012, 24, 1775–1777.
  32. Hsueh, H.-H.; Ou, S.-L.; Wuu, D.-S.; Horng, R.-H. InGaN LED fabricated on Eco-GaN template with a Ga2O3 sacrificial layer for chemical lift-off application. Vacuum 2015, 118, 8–12.
  33. Huang, S.; Zhang, Y.; Leung, B.; Yuan, G.; Wang, G.; Jiang, H.; Fan, Y.; Sun, Q.; Wang, J.; Xu, K.; et al. Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films. ACS Appl Mater Interfaces 2013, 5, 11074–11079.
  34. Huo, Q.; Shao, Y.; Wu, Y.; Zhang, B.; Hu, H.; Hao, X. High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE. Sci. Rep. 2018, 8, 3166.
  35. Jiang, J.; Dong, J.; Wang, B.; He, C.; Zhao, W.; Chen, Z.; Zhang, K.; Wang, X. Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes. J. Mater. Chem. C 2020, 8, 8284–8289.
  36. Kang, K.; Lee, K.H.; Han, Y.; Gao, H.; Xie, S.; Muller, D.A.; Park, J. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures. Nature 2017, 550, 229–233.
  37. Lee, D.; Cherekdjian, S.; Kang, S.; Mishra, K.; Ong, P.; Xu, X. 18-2: Ultra-Fine High Efficiency MicroLEDs with Testability and Transferability Using Layer-Transfer Technology. SID Symp. Dig. Tech. Pap. 2019, 50, 236–239.
  38. Lee, S.; Kim, S.K.; Han, J.-H.; Song, J.D.; Jun, D.-H.; Kim, S.-H. Epitaxial Lift-Off Technology for Large Size III–V-on-Insulator Substrate. IEEE Electron Device Lett. 2019, 40, 1732–1735.
  39. Lesecq, M.; Hoel, V.; Lecavelier des Etangs-Levallois, A.; Pichonat, E.; Douvry, Y.; De Jaeger, J.C. High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape. IEEE Electron Device Lett. 2011, 32, 143–145.
  40. Li, Y.; Zhao, Y.; Wei, T.; Liu, Z.; Duan, R.; Wang, Y.; Zhang, X.; Wu, Q.; Yan, J.; Yi, X.; et al. Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film. Jpn. J. Appl. Phys. 2017, 56, 85506.
  41. Lin, C.-F.; Dai, J.-J.; Lin, M.-S.; Chen, K.-T.; Huang, W.-C.; Lin, C.-M.; Jiang, R.-H.; Huang, Y.-C. An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process. Appl. Phys. Express 2010, 3, 31001.
  42. Lin, C.-F.; Dai, J.-J.; Wang, G.-M.; Lin, M.-S. Chemical Lift-Off Process for Blue Light-Emitting Diodes. Appl. Phys. Express 2010, 3, 092101.
  43. Lin, M.-S.; Lin, C.-F.; Huang, W.-C.; Wang, G.-M.; Shieh, B.-C.; Dai, J.-J.; Chang, S.-Y.; Wuu, D.S.; Liu, P.-L.; Horng, R.-H. Chemical–Mechanical Lift-Off Process for InGaN Epitaxial Layers. Appl. Phys. Express 2011, 4, 062101.
  44. Liu, H.F.; Liu, W.; Chua, S.J. Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates. J. Vac. Sci. Technol. A Vac. Surf. Films 2010, 28, 590–594.
  45. Meyer, D.J.; Downey, B.P.; Katzer, D.S.; Nepal, N.; Wheeler, V.D.; Hardy, M.T.; Anderson, T.J.; Storm, D.F. Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates. IEEE Trans. Semicond. Manuf. 2016, 29, 384–389.
  46. O’Callaghan, J.; Loi, R.; Mura, E.E.; Roycroft, B.; Trindade, A.J.; Thomas, K.; Gocalinska, A.; Pelucchi, E.; Zhang, J.; Roelkens, G.; et al. Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices. Opt. Mater. Express 2017, 7, 4408.
  47. Park, J.; Song, K.M.; Jeon, S.-R.; Baek, J.H.; Ryu, S.-W. Doping selective lateral electrochemical etching of GaN for chemical lift-off. Appl. Phys. Lett. 2009, 94, 221907.
  48. Park, S.H.; Yuan, G.; Chen, D.; Xiong, K.; Song, J.; Leung, B.; Han, J. Wide bandgap III-nitride nanomembranes for optoelectronic applications. Nano Lett. 2014, 14, 4293–4298.
  49. Pasayat, S.S.; Gupta, C.; Wong, M.S.; Wang, Y.; Nakamura, S.; Denbaars, S.P.; Keller, S.; Mishra, U.K. Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates. Appl. Phys. Lett. 2020, 116, 111101.
  50. Rajan, A.; Rogers, D.J.; Ton-That, C.; Zhu, L.; Phillips, M.R.; Sundaram, S.; Gautier, S.; Moudakir, T.; El-Gmili, Y.; Ougazzaden, A.; et al. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer. J. Phys. D Appl. Phys. 2016, 49, 315105.
  51. Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Meulemeesters, W.J.; Haverkamp, E.; Voncken, M.M.A.J.; Larsen, P.K. High rate epitaxial lift-off of InGaP films from GaAs substrates. Appl. Phys. Lett. 2000, 76, 2131–2133.
  52. Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Voncken, M.M.A.J.; van Deelen, J.; Haverkamp, E.; Larsen, P.K. Epitaxial Lift-Off for large area thin film III/V devices. Phys. Status Solidi 2005, 202, 501–508.
  53. Voncken, M.M.A.J.; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K. Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process. Appl. Phys. A 2004, 79, 1801–1807.
  54. Vuong, P.; Sundaram, S.; Mballo, A.; Patriarche, G.; Leone, S.; Benkhelifa, F.; Karrakchou, S.; Moudakir, T.; Gautier, S.; Voss, P.L.; et al. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN. ACS Appl. Mater. Interfaces 2020, 12, 55460–55466.
  55. Wu, F.L.; Ou, S.L.; Kao, Y.C.; Chen, C.L.; Tseng, M.C.; Lu, F.C.; Lin, M.T.; Horng, R.H. Thin-film vertical-type AlGaInP LEDs fabricated by epitaxial lift-off process via the patterned design of Cu substrate. Opt. Express 2015, 23, 18156–18165.
  56. Xiong, K.; Mi, H.; Chang, T.-H.; Liu, D.; Xia, Z.; Wu, M.-Y.; Yin, X.; Gong, S.; Zhou, W.; Shin, J.C.; et al. AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding. Energy Sci. Eng. 2018, 6, 47–55.
  57. Xiong, K.; Park, S.H.; Song, J.; Yuan, G.; Chen, D.; Leung, B.; Han, J. Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor. Adv. Funct. Mater. 2014, 24, 6503–6508.
  58. Yang, W.; Yang, H.; Qin, G.; Ma, Z.; Berggren, J.; Hammar, M.; Soref, R.; Zhou, W. Large-area InP-based crystalline nanomembrane flexible photodetectors. Appl. Phys. Lett. 2010, 96, 121107.
  59. Youtsey, C.; McCarthy, R.; Reddy, R.; Forghani, K.; Xie, A.; Beam, E.; Wang, J.; Fay, P.; Ciarkowski, T.; Carlson, E.; et al. Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching. Phys. Status Solidi 2017, 254, 1600774.
  60. Zang, K.; Cheong, D.; Liu, H.; Liu, H.; Teng, J.; Chua, S. A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration. Nanoscale Res. Lett. 2010, 5, 1051–1056.
  61. Zhang, B.; Egawa, T.; Ishikawa, H.; Liu, Y.; Jimbo, T. Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off. Appl. Phys. Lett. 2005, 86, 071113.
  62. Zhang, Y.; Leung, B.; Han, J. A liftoff process of GaN layers and devices through nanoporous transformation. Appl. Phys. Lett. 2012, 100, 181908.
  63. Zhang, Y.; Ryu, S.-W.; Yerino, C.; Leung, B.; Sun, Q.; Song, Q.; Cao, H.; Han, J. A conductivity-based selective etching for next generation GaN devices. Phys. Status Solidi 2010, 247, 1713–1716.
  64. Zhang, Y.; Sun, Q.; Leung, B.; Simon, J.; Lee, M.L.; Han, J. The fabrication of large-area, free-standing GaN by a novel nanoetching process. NanoTechnology 2011, 22, 045603.
  65. Zhao, C.; Ng, T.K.; Tseng, C.-C.; Li, J.; Shi, Y.; Wei, N.; Zhang, D.; Consiglio, G.B.; Prabaswara, A.; Alhamoud, A.A.; et al. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters. RSC Adv. 2017, 7, 26665–26672.
  66. Chang, T.-H.; Fan, W.; Liu, D.; Xia, Z.; Ma, Z.; Liu, S.; Menon, L.; Yang, H.; Zhou, W.; Berggren, J.; et al. Selective release of InP heterostructures from InP substrates. J. Vac. Sci. Technol. B Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 2016, 34, 041229.
  67. Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Huijben, J.C.C.M.; Schermer, J.J. 26.1% thin-film GaAs solar cell using epitaxial lift-off. Solar Energy Mater. Solar Cells 2009, 93, 1488–1491.
  68. Kirk, A.P.; Cardwell, D.W.; Wood, J.D.; Wibowo, A.; Forghani, K.; Rowell, D.; Pan, N.; Osowski, M. Recent Progress in Epitaxial Lift-Off Solar Cells. Proceedings of 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa HI, USA, 10–15 June 2018; pp. 32–35.
  69. Moon, S.; Kim, K.; Kim, Y.; Heo, J.; Lee, J. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate. Sci. Rep. 2016, 6, 30107.
  70. Xu, K.; Wang, J.-F.; Ren, G.-Q. Progress in bulk GaN growth. Chin. Phys. B 2015, 24, 066105.
  71. Wang, Q.; Liu, Y.; Sun, Y.; Tong, Y.; Zhang, G. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process. J. Semicond. 2016, 37, 083001.
  72. Seo, J.-H.; Li, J.; Lee, J.; Gong, S.; Lin, J.; Jiang, H.; Ma, Z. A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate. IEEE Photonics J. 2015, 7, 1–7.
  73. Miskys, C.R.; Kelly, M.K.; Ambacher, O.; Stutzmann, M. Freestanding GaN-substrates and devices. Phys. Status Solidi 2003, 1627–1650.
  74. Delmdahl, R.; Pätzel, R.; Brune, J. Large-Area Laser-Lift-Off Processing in Microelectronics. Phys. Procedia 2013, 41, 241–248.
  75. Kelly, M.K.; Vaudo, R.P.; Phanse, V.M.; Görgens, L.; Ambacher, O.; Stutzmann, M. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff. Jpn. J. Appl. Phys. 1999, 38, L217–L219.
  76. Park, S.S.; Park, I.-W.; Choh, S.H. Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy. Jpn. J. Appl. Phys. 2000, 39, L1141–L1142.
  77. Ueda, T.; Ishida, M.; Yuri, M. Separation of Thin GaN from Sapphire by Laser Lift-Off Technique. Jpn. J. Appl. Phys. 2011, 50, 041001.
  78. Mohseni, H.; Lee, S.H.; Park, S.Y.; Lee, K.J.; Agahi, M.H.; Razeghi, M. Laser lift-off of GaN thin film and its application to the flexible light emitting diodes. Proceedings of Biosensing and Nanomedicine V, Sand Diego, CA, USA, 10 October 2012; p. 846011.
  79. Kim, K.; Kim, S.Y.; Lee, J.-L. Flexible organic light-emitting diodes using a laser lift-off method. J. Mater. Chem. C 2014, 2, 2144.
  80. Tian, Z.; Li, Y.; Su, X.; Feng, L.; Wang, S.; Ding, W.; Li, Q.; Zhang, Y.; Guo, M.; Yun, F.; et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer. Opt. Express 2018, 26, 1817–1824.
  81. Kim, S.J.; Lee, H.E.; Choi, H.; Kim, Y.; We, J.H.; Shin, J.S.; Lee, K.J.; Cho, B.J. High-Performance Flexible Thermoelectric Power Generator Using Laser Multiscanning Lift-Off Process. ACS Nano 2016, 10, 10851–10857.
  82. Dross, F.; Robbelein, J.; Vandevelde, B.; Van Kerschaver, E.; Gordon, I.; Beaucarne, G.; Poortmans, J. Stress-induced large-area lift-off of crystalline Si films. Appl. Phys. A 2007, 89, 149–152.
  83. Bedell, S.W.; Shahrjerdi, D.; Hekmatshoar, B.; Fogel, K.; Lauro, P.A.; Ott, J.A.; Sosa, N.; Sadana, D. Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies. IEEE J. Photovolt. 2012, 2, 141–147.
  84. Shahrjerdi, D.; Bedell, S.W.; Ebert, C.; Bayram, C.; Hekmatshoar, B.; Fogel, K.; Lauro, P.; Gaynes, M.; Gokmen, T.; Ott, J.A.; et al. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology. Appl. Phys. Lett. 2012, 100, 053901.
  85. Bedell, S.W.; Bayram, C.; Fogel, K.; Lauro, P.; Kiser, J.; Ott, J.; Zhu, Y.; Sadana, D. Vertical Light-Emitting Diode Fabrication by Controlled Spalling. Appl. Phys. Express 2013, 6, 112301.
  86. Bedell, S.W.; Fogel, K.; Lauro, P.; Shahrjerdi, D.; Ott, J.A.; Sadana, D. Layer transfer by controlled spalling. J. Phys. D Appl. Phys. 2013, 46, 152002.
  87. Kwon, Y.; Yang, C.; Yoon, S.-H.; Um, H.-D.; Lee, J.-H.; Yoo, B. Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping. Appl. Phys. Express 2013, 6, 116502.
  88. Shahrjerdi, D.; Bedell, S.W. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic. Nano Lett. 2013, 13, 315–320.
  89. Shahrjerdi, D.; Bedell, S.W.; Bayram, C.; Lubguban, C.C.; Fogel, K.; Lauro, P.; Ott, J.A.; Hopstaken, M.; Gayness, M.; Sadana, D. Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic. Adv. Energy Mater. 2013, 3, 566–571.
  90. Sweet, C.A.; Schulte, K.L.; Simon, J.D.; Steiner, M.A.; Jain, N.; Young, D.L.; Ptak, A.J.; Packard, C.E. Controlled exfoliation of (100) GaAs-based devices by spalling fracture. Appl. Phys. Lett. 2016, 108, 011906.
  91. Bedell, S.W.; Lauro, P.; Ott, J.A.; Fogel, K.; Sadana, D.K. Layer transfer of bulk gallium nitride by controlled spalling. J. Appl. Phys. 2017, 122, 025103.
  92. Park, H.; Lim, C.; Noh, Y.; Lee, C.-J.; Won, H.; Jung, J.; Choi, M.; Kim, J.-J.; Yoo, H.; Park, H. Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process. Solid-State Electron. 2020, 173, 107901.
  93. Kim, J.; Bayram, C.; Park, H.; Cheng, C.W.; Dimitrakopoulos, C.; Ott, J.A.; Reuter, K.B.; Bedell, S.W.; Sadana, D.K. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat. Commun. 2014, 5, 4836.
  94. Chung, K.; Lee, C.H.; Yi, G.C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science 2010, 330, 655–657.
  95. Lin, Y.M.; Dimitrakopoulos, C.; Jenkins, K.A.; Farmer, D.B.; Chiu, H.Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene. Science 2010, 327, 662.
  96. Chung, K.; In Park, S.; Baek, H.; Chung, J.-S.; Yi, G.-C. High-quality GaN films grown on chemical vapor-deposited graphene films. NPG Asia Mater. 2012, 4, e24.
  97. Kobayashi, Y.; Kumakura, K.; Akasaka, T.; Makimoto, T. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. Nature 2012, 484, 223–227.
  98. Makimoto, T.; Kumakura, K.; Kobayashi, Y.; Akasaka, T.; Yamamoto, H. A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN. Appl. Phys. Express 2012, 5, 072102.
  99. Nepal, N.; Wheeler, V.D.; Anderson, T.J.; Kub, F.J.; Mastro, M.A.; Myers-Ward, R.L.; Qadri, S.B.; Freitas, J.A.; Hernandez, S.C.; Nyakiti, L.O.; et al. Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices. Appl. Phys. Express 2013, 6, 061003.
  100. Chung, K.; Beak, H.; Tchoe, Y.; Oh, H.; Yoo, H.; Kim, M.; Yi, G.-C. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes. APL Mater. 2014, 2, 092512.
  101. Ayari, T.; Sundaram, S.; Li, X.; El Gmili, Y.; Voss, P.L.; Salvestrini, J.P.; Ougazzaden, A. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN. Appl. Phys. Lett. 2016, 108, 171106.
  102. Chung, K.; Yoo, H.; Hyun, J.K.; Oh, H.; Tchoe, Y.; Lee, K.; Baek, H.; Kim, M.; Yi, G.C. Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots. Adv. Mater. 2016, 28, 7688–7694.
  103. Wu, C.; Soomro, A.M.; Sun, F.; Wang, H.; Huang, Y.; Wu, J.; Liu, C.; Yang, X.; Gao, N.; Chen, X.; et al. Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer. Sci. Rep. 2016, 6, 34766.
  104. Kim, Y.; Cruz, S.S.; Lee, K.; Alawode, B.O.; Choi, C.; Song, Y.; Johnson, J.M.; Heidelberger, C.; Kong, W.; Choi, S.; et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature 2017, 544, 340–343.
  105. Chen, Z.; Zhang, X.; Dou, Z.; Wei, T.; Liu, Z.; Qi, Y.; Ci, H.; Wang, Y.; Li, Y.; Chang, H.; et al. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Adv. Mater. 2018, 30, e1801608.
  106. Chang, H.; Chen, Z.; Li, W.; Yan, J.; Hou, R.; Yang, S.; Liu, Z.; Yuan, G.; Wang, J.; Li, J.; et al. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. Appl. Phys. Lett. 2019, 114, 091107.
  107. Ci, H.; Chang, H.; Wang, R.; Wei, T.; Wang, Y.; Chen, Z.; Sun, Y.; Dou, Z.; Liu, Z.; Li, J.; et al. Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer. Adv. Mater. 2019, 31, e1901624.
  108. Jia, Y.; Ning, J.; Zhang, J.; Yan, C.; Wang, B.; Zhang, Y.; Zhu, J.; Shen, X.; Dong, J.; Wang, D.; et al. Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High-Brightness Violet Light-Emitting Diodes. Adv. Opt. Mater. 2019, 8, 1901632.
  109. Liu, F.; Zhang, Z.; Rong, X.; Yu, Y.; Wang, T.; Sheng, B.; Wei, J.; Zhou, S.; Yang, X.; Xu, F.; et al. Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes. Adv. Funct. Mater. 2020, 30, 2001283.
  110. Yu, J.; Wang, L.; Hao, Z.; Luo, Y.; Sun, C.; Wang, J.; Han, Y.; Xiong, B.; Li, H. Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications. Adv. Mater. 2020, 32, e1903407.
  111. Lee, C.H.; Kim, D.R.; Cho, I.S.; William, N.; Wang, Q.; Zheng, X. Peel-and-stick: Fabricating thin film solar cell on universal substrates. Sci. Rep. 2012, 2, 1000.
  112. Lee, C.H.; Kim, J.H.; Zou, C.; Cho, I.S.; Weisse, J.M.; Nemeth, W.; Wang, Q.; van Duin, A.C.; Kim, T.S.; Zheng, X. Peel-and-stick: Mechanism study for efficient fabrication of flexible/transparent thin-film electronics. Sci. Rep. 2013, 3, 2917.
  113. Wie, D.S.; Zhang, Y.; Kim, M.K.; Kim, B.; Park, S.; Kim, Y.J.; Irazoqui, P.P.; Zheng, X.; Xu, B.; Lee, C.H. Wafer-recyclable, environment-friendly transfer printing for large-scale thin-film nanoelectronics. Proc. Natl. Acad. Sci. USA 2018, 115, E7236–E7244.
  114. Chung, R.B.-K.; Kim, D.; Lim, S.-K.; Choi, J.-S.; Kim, K.-J.; Lee, B.-H.; Jung, K.S.; Kim-Lee, H.-J.; Lee, W.J.; Park, B.; et al. Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes. Appl. Phys. Express 2013, 6, 111005.
  115. Tapily, K.; Moutanabbir, O.; Abdullah, M.; Gu, D.; Baumgart, H.; Elmustafa, A. Hydrogen Ion-Induced AlN Thin Layer Transfer: An Elastomechanical Study. ECS Trans. 2019, 33, 255–261.
  116. Tauzin, A.; Akatsu, T.; Rabarot, M.; Dechamp, J.; Zussy, M.; Moriceau, H.; Michaud, J.F.; Charvet, A.M.; Di Cioccio, L.; Fournel, F.; et al. Transfers of 2-inch GaN films onto sapphire substrates using Smart CutTM technology. Electron. Lett. 2005, 41, 668.
  117. Dadwal, U.; Scholz, R.; Reiche, M.; Kumar, P.; Chandra, S.; Singh, R. Effect of implantation temperature on the blistering behavior of hydrogen implanted GaN. Appl. Phys. A 2012, 112, 451–456.
  118. Iwinska, M.; Amilusik, M.; Fijalkowski, M.; Sochacki, T.; Lucznik, B.; Grzanka, E.; Litwin-Staszewska, E.; Weyher, J.L.; Nowakowska-Siwinska, A.; Muziol, G.; et al. HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™. J. Cryst. Growth 2016, 456, 73–79.
  119. Huang, K.; Jia, Q.; You, T.; Zhang, R.; Lin, J.; Zhang, S.; Zhou, M.; Zhang, B.; Yu, W.; Ou, X.; et al. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates. Sci. Rep. 2017, 7, 15017.
  120. Min Lee, S.; Hwan Yum, J.; Larsen, E.S.; Chul Lee, W.; Keun Kim, S.; Bielawski, C.W.; Oh, J. Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. Sci. Rep. 2017, 7, 13205.
  121. Nguyen, B.-Y.; Mazuré, C.; Celler, G. Substrate Engineering for 32nm and Beyond. ECS Trans. 2019, 22, 91–98.
More
© Text is available under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
Video Production Service
Feedback