Near-Infrared Graphene/Silicon Photodetectors

Near-Infrared Graphene/Silicon Photodetectors: Comparison

Please note this is a comparison between Version 3 by Peter Tang and Version 2 by Peter Tang.

In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal.

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References

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