Silicon Nanowires Synthesis by MACE: Comparison
View Latest Version
Please note this is a comparison between Version 2 by Vivi Li and Version 1 by Antonio Alessio Leonardi.

Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach. 

  • silicon
  • silicon nanowires
  • MACE metal-assisted chemical etching
  • nanotechnology
  • CMOS-compatible
Please wait, diff process is still running!

References

  1. Waldrop, M.M. More Than Moore. Nature 2016, 530, 144–147.
  2. Radamson, H.H.; Zhu, H.; Wu, Z.; He, X.; Lin, H.; Liu, J.; Xiang, J.; Kong, Z.; Xiong, W.; Li, J.; et al. State of the Art and Future Perspectives in Advanced CMOS Technology. Nanomaterials 2020, 10, 1555.
  3. Radamson, H.H.; He, X.; Zhang, Q.; Liu, J.; Cui, H.; Xiang, J.; Kong, Z.; Xiong, W.; Li, J.; Gao, J.; et al. Miniaturization of CMOS. Micromachines 2019, 10, 293.
  4. Cobalt Could Untangle Chips’ Wiring Problems—IEEE Spectrum. Available online: https://spectrum.ieee.org/semiconductors/materials/cobalt-could-untangle-chips-wiring-problems (accessed on 3 December 2020).
  5. Cui, Y.; Zhong, Z.; Wang, D.; Wang, W.U.; Lieber, C.M. High performance silicon nanowire field effect transistors. Nano Lett. 2003, 3, 149–152.
  6. Feng, W.; Hettiarachchi, R.; Sato, S.; Kakushima, K.; Niwa, M.; Iwai, H.; Yamada, K.; Ohmori, K. Advantages of silicon nanowire metal-oxide-semiconductor field-effect transistors over planar ones in noise properties. Jpn. J. Appl. Phys. 2012, 51, 04DC06.
  7. Koo, S.M.; Edelstein, M.D.; Li, Q.; Richter, C.A.; Vogel, E.M. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors. Nanotechnology 2005, 16, 1482–1485.
  8. Garnett, E.; Yang, P. Light Trapping in Silicon Nanowire Solar Cells. Nano Lett. 2010, 10, 1082–1087.
  9. Kelzenberg, M.D.; Boettcher, S.W.; Petykiewicz, J.A.; Turner-Evans, D.B.; Putnam, M.C.; Warren, E.L.; Spurgeon, J.M.; Briggs, R.M.; Lewis, N.S.; Atwater, H.A. Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications. Nat. Mater. 2010, 9, 239–244.
  10. Cao, L.; Fan, P.; Vasudev, A.P.; White, J.S.; Yu, Z.; Cai, W.; Schuller, J.A.; Fan, S.; Brongersma, M.L. Semiconductor Nanowire Optical Antenna Solar Absorbers. Nano Lett. 2010, 10, 439–445.
  11. Walavalkar, S.S.; Hofmann, C.E.; Homyk, A.P.; Henry, M.D.; Atwater, H.A.; Scherer, A. Tunable visible and near-IR emission from sub-10 nm etched single-crystal Si nanopillars. Nano Lett. 2010, 10, 4423–4428.
  12. Leonardi, A.A.; Nastasi, F.; Morganti, D.; Lo Faro, M.J.; Picca, R.A.; Cioffi, N.; Franzò, G.; Serroni, S.; Priolo, F.; Puntoriero, F.; et al. New Hybrid Light Harvesting Antenna Based on Silicon Nanowires and Metal Dendrimers. Adv. Opt. Mater. 2020, 8, 2001070.
  13. Kalem, S.; Werner, P.; Talalaev, V. Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: Effect of HF treatment. Appl. Phys. A Mater. Sci. Process. 2013, 112, 561–567.
  14. Leonardi, A.A.A.A.; Lo Faro, M.J.M.J.; Di Franco, C.; Palazzo, G.; D’Andrea, C.; Morganti, D.; Manoli, K.; Musumeci, P.; Fazio, B.; Lanza, M.; et al. Silicon nanowire luminescent sensor for cardiovascular risk in saliva. J. Mater. Sci. Mater. Electron. 2020, 31, 10–17.
  15. Patolsky, F.; Zheng, G.; Lieber, C.M. Nanowire sensors for medicine and the life sciences. Nanomedicine 2006, 1, 51–65.
  16. In, H.J.; Field, C.R.; Pehrsson, P.E. Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection. Nanotechnology 2011, 22, 355501.
  17. Nah, J.; Liu, E.S.; Shahrjerdi, D.; Varahramyan, K.M.; Banerjee, S.K.; Tutuc, E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain. Appl. Phys. Lett. 2009, 94, 063117.
  18. Javey, A.; Nam, S.; Friedman, R.S.; Yan, H.; Lieber, C.M. Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics. Nano Lett. 2007, 7, 773–777.
  19. Goldberger, J.; Hochbaum, A.I.; Fan, R.; Yang, P. Silicon vertically integrated nanowire field effect transistors. Nano Lett. 2006, 6, 973–977.
  20. Lo Faro, M.J.; Leonardi, A.A.; Morganti, D.; Fazio, B.; Vasi, C.; Musumeci, P.; Priolo, F.; Irrera, A. Low Cost Fabrication of Si NWs/CuI Heterostructures. Nanomaterials 2018, 8, 569.
  21. Liu, K.; Zhu, Z.H.; Li, X.J.; Zhang, J.F.; Yuan, X.D.; Guo, C.C.; Xu, W.; Qin, S.Q. Bright Multicolored Photoluminescence of Hybrid Graphene/Silicon Optoelectronics. ACS Photonics 2015, 2, 797–804.
  22. Peng, K.Q.; Yan, Y.J.; Gao, S.P.; Zhu, J. Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectrochemistry. Adv. Mater. 2002, 14, 1164–1167.
  23. Peng, K.; Fang, H.; Hu, J.; Wu, Y.; Zhu, J.; Yan, Y.; Lee, S. Metal-Particle-Induced, Highly Localized Site-Specific Etching of Si and Formation of Single-Crystalline Si Nanowires in Aqueous Fluoride Solution. Chem. A Eur. J. 2006, 12, 7942–7947.
  24. Peng, K.; Hu, J.; Yan, Y.; Wu, Y.; Fang, H.; Xu, Y.; Lee, S.; Zhu, J. Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles. Adv. Funct. Mater. 2006, 16, 387–394.
  25. Donato, M.G.M.G.; Brzobohatý, O.; Simpson, S.H.S.H.; Irrera, A.; Leonardi, A.A.A.A.; Lo Faro, M.J.M.J.; Svak, V.; Maragò, O.M.O.M.; Zemánek, P. Optical Trapping, Optical Binding, and Rotational Dynamics of Silicon Nanowires in Counter-Propagating Beams. Nano Lett. 2019, 19, 342–352.
  26. Venkatesan, R.; Arivalagan, M.K.; Venkatachalapathy, V.; Pearce, J.M.; Mayandi, J. Effects of silver catalyst concentration in metal assisted chemical etching of silicon. Mater. Lett. 2018, 221, 206–210.
  27. Chang, S.W.; Chuang, V.P.; Boles, S.T.; Ross, C.A.; Thompson, C.V. Densely packed arrays of ultra-high-as pect-ratio silicon nanowires fabricated using block-copolymer lithography and metal-assisted etching. Adv. Funct. Mater. 2009, 19, 2495–2500.
  28. Ono, S.; Oide, A.; Asoh, H. Nanopatterning of silicon with use of self-organized porous alumina and colloidal crystals as mask. Electrochim. Acta 2007, 52, 2898–2904.
  29. Pal, A.; Ghosh, R.; Giri, P.K. Early stages of growth of Si nanowires by metal assisted chemical etching: A scaling study. Appl. Phys. Lett. 2015, 107, 072104.
  30. Nahidi, M.; Kolasinski, K.W. Effects of Stain Etchant Composition on the Photoluminescence and Morphology of Porous Silicon. J. Electrochem. Soc. 2006, 153, C19.
  31. Nahm, K.S.; Seo, Y.H.; Lee, H.J. Formation mechanism of stains during Si etching reaction in HF-oxidizing agent-H2O solutions. J. Appl. Phys. 1997, 81, 2418–2424.
  32. Seo, Y.H.; Nahm, K.S.; Lee, K.B. Mechanistic Study of Silicon Etching in HF-KBrO3-H2O Solution. J. Electrochem. Soc. 1993, 140, 1453–1458.
  33. Huang, Z.; Geyer, N.; Werner, P.; de Boor, J.; Gösele, U. Metal-Assisted Chemical Etching of Silicon: A Review. Adv. Mater. 2011, 23, 285–308.
  34. Huang, J.C.; Sen, R.K.; Yeager, E. Oxygen Reduction on Platinum in 85% Orthophosphoric Acid. J. Electrochem. Soc. 1979, 126, 786–792.
  35. Zeis, R.; Lei, T.; Sieradzki, K.; Snyder, J.; Erlebacher, J. Catalytic reduction of oxygen and hydrogen peroxide by nanoporous gold. J. Catal. 2008, 253, 132–138.
  36. Flätgen, G.; Wasle, S.; Lübke, M.; Eickes, C.; Radhakrishnan, G.; Doblhofer, K.; Ertl, G. Autocatalytic mechanism of H2O2 reduction on Ag electrodes in acidic electrolyte: Experiments and simulations. Electrochim. Acta 1999, 44, 4499–4506.
  37. Tsujino, K.; Matsumura, M. Boring deep cylindrical nanoholes in silicon using silver nanoparticles as a catalyst. Adv. Mater. 2005, 17, 1045–1047.
  38. Chen, C.Y.; Wu, C.S.; Chou, C.J.; Yen, T.J. Morphological control of single-crystalline silicon nanowire arrays near room temperature. Adv. Mater. 2008, 20, 3811–3815.
  39. Naffeti, M.; Postigo, P.A.; Chtourou, R.; Zaïbi, M.A. Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires. Nanomaterials 2020, 10, 404.
  40. Lo Faro, M.J.M.J.; Leonardi, A.A.A.A.; D’Andrea, C.; Morganti, D.; Musumeci, P.; Vasi, C.; Priolo, F.; Fazio, B.; Irrera, A. Low cost synthesis of silicon nanowires for photonic applications. J. Mater. Sci. Mater. Electron. 2020, 31, 34–40.
  41. Cheng, S.L.; Chung, C.H.; Lee, H.C. A Study of the Synthesis, Characterization, and Kinetics of Vertical Silicon Nanowire Arrays on (001)Si Substrates. J. Electrochem. Soc. 2008, 155, D711.
  42. Chattopadhyay, S.; Li, X.; Bohn, P.W. In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching. J. Appl. Phys. 2002, 91, 6134–6140.
  43. Peng, K.; Lu, A.; Zhang, R.; Lee, S.T. Motility of metal nanoparticles in silicon and induced anisotropic silicon etching. Adv. Funct. Mater. 2008, 18, 3026–3035.
  44. Peng, K.; Yan, Y.; Gao, S.; Zhu, J. Dendrite-Assisted Growth of Silicon Nanowires in Electroless Metal Deposition. Adv. Funct. Mater. 2003, 13, 127–132.
  45. Salem, A.M.S.; Harraz, F.A.; El-Sheikh, S.M.; Ismat Shah, S. Novel Si nanostructures via Ag-assisted chemical etching route on single and polycrystalline substrates. Mater. Sci. Eng. B Solid-State Mater. Adv. Technol. 2020, 262, 114793.
  46. Huang, Z.; Shimizu, T.; Senz, S.; Zhang, Z.; Geyer, N.; Gösele, U. Oxidation rate effect on the direction of metal-assisted chemical and electrochemical etching of silicon. J. Phys. Chem. C 2010, 114, 10683–10690.
  47. Huang, Z.; Shimizu, T.; Senz, S.; Zhang, Z.; Zhang, X.; Lee, W.; Geyer, N.; Gösele, U. Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions. Nano Lett. 2009, 9, 2519–2525.
  48. Smith, Z.R.; Smith, R.L.; Collins, S.D. Mechanism of nanowire formation in metal assisted chemical etching. Electrochim. Acta 2013, 92, 139–147.
  49. Nassiopoulou, A.G.; Gianneta, V.; Katsogridakis, C. Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: Formation kinetics. Nanoscale Res. Lett. 2011, 6, 1–8.
  50. Weisse, J.M.; Kim, D.R.; Lee, C.H.; Zheng, X. Vertical transfer of uniform silicon nanowire arrays via crack formation. Nano Lett. 2011, 11, 1300–1305.
  51. Han, H.; Huang, Z.; Lee, W. Metal-assisted chemical etching of silicon and nanotechnology applications. Nano Today 2014, 9, 271–304.
  52. Yue, Z.; Shen, H.; Jiang, Y.; Wang, W.; Jin, J. Novel and low reflective silicon surface fabricated by Ni-assisted electroless etching and coated with atomic layer deposited Al2O 3 film. Appl. Phys. A Mater. Sci. Process. 2014, 114, 813–817.
  53. Hildreth, O.; Rykaczewski, K.; Wong, C.P. Participation of focused ion beam implanted gallium ions in metal-assisted chemical etching of silicon. J. Vac. Sci. Technol. B Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 2012, 30, 040603.
  54. Cui, L.; Xia, W.W.; Wang, F.; Yang, L.J.; Hu, Y.J. Investigations on the Si/SiO2 interface defects of silicon nanowires. Phys. B Condens. Matter 2013, 409, 47–50.
  55. Kato, Y.; Adachi, S. Synthesis of Si Nanowire Arrays in AgO/HF Solution and Their Optical and Wettability Properties. J. Electrochem. Soc. 2011, 158, K157.
  56. Kato, Y.; Adachi, S. Fabrication and optical characterization of Si nanowires formed by catalytic chemical etching in Ag2O/HF solution. Appl. Surf. Sci. 2012, 258, 5689–5697.
  57. Kim, S.-M.; Khang, D.-Y. Bulk Micromachining of Si by Metal-assisted Chemical Etching. Small 2014, 10, 3761–3766.
  58. Hildreth, O.J.; Lin, W.; Wong, C.P. Effect of catalyst shape and etchant composition on etching direction in metal-assisted chemical etching of silicon to fabricate 3D nanostructures. ACS Nano 2009, 3, 4033–4042.
  59. Pérez-Díaz, O.; Quiroga-González, E.; Silva-González, N.R. Silicon microstructures through the production of silicon nanowires by metal-assisted chemical etching, used as sacrificial material. J. Mater. Sci. 2019, 54, 2351–2357.
  60. Fang, H.; Wu, Y.; Zhao, J.; Zhu, J. Silver catalysis in the fabrication of silicon nanowire arrays. Nanotechnology 2006, 17, 3768–3774.
  61. Huang, Z.; Fang, H.; Zhu, J. Fabrication of silicon nanowire arrays with controlled diameter, length, and density. Adv. Mater. 2007, 19, 744–748.
  62. Harada, Y.; Li, X.; Bohn, P.W.; Nuzzo, R.G. Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays. J. Am. Chem. Soc. 2001, 123, 8709–8717.
  63. Kim, J.; Han, H.; Kim, Y.H.; Choi, S.H.; Kim, J.C.; Lee, W. Au/Ag bilayered metal mesh as a Si etching catalyst for controlled fabrication of Si nanowires. ACS Nano 2011, 5, 3222–3229.
  64. Wang, S.; Liu, H.; Han, J. Comprehensive study of Au nano-mesh as a catalyst in the fabrication of silicon nanowires arrays by metal-assisted chemical etching. Coatings 2019, 9, 149.
  65. Li, H.; Ye, T.; Shi, L.; Xie, C. Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching. J. Micromech. Microeng. 2017, 27, 124002.
  66. Miao, B.; Zhang, J.; Ding, X.; Wu, D.; Wu, Y.; Lu, W.; Li, J. Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure. J. Micromech. Microeng. 2017, 27, 055019.
  67. Zahedinejad, M.; Farimani, S.D.; Khaje, M.; Mehrara, H.; Erfanian, A.; Zeinali, F. Deep and vertical silicon bulk micromachining using metal assisted chemical etching. J. Micromech. Microeng. 2013, 23, 055015.
  68. Li, L.; Zhang, G.; Wong, C.P. Formation of Through Silicon Vias for Silicon Interposer in Wafer Level by Metal-Assisted Chemical Etching. IEEE Trans. Compon. Packag. Manuf. Technol. 2015, 5, 1039–1049.
  69. Zhang, M.L.; Peng, K.Q.; Fan, X.; Jie, J.S.; Zhang, R.Q.; Lee, S.T.; Wong, N.B. Preparation of large-area uniform silicon nanowires arrays through metal-assisted chemical etching. J. Phys. Chem. C 2008, 112, 4444–4450.
  70. Chern, W.; Hsu, K.; Chun, I.S.; Azeredo, B.P.D.; Ahmed, N.; Kim, K.H.; Zuo, J.M.; Fang, N.; Ferreira, P.; Li, X. Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays. Nano Lett. 2010, 10, 1582–1588.
  71. Kim, J.; Kim, Y.H.; Choi, S.H.; Lee, W. Curved silicon nanowires with ribbon-like cross sections by metal-assisted chemical etching. ACS Nano 2011, 5, 5242–5248.
  72. Sandu, G.; Avila Osses, J.; Luciano, M.; Caina, D.; Stopin, A.; Bonifazi, D.; Gohy, J.F.; Silhanek, A.; Florea, I.; Bahri, M.; et al. Kinked Silicon Nanowires: Superstructures by Metal-Assisted Chemical Etching. Nano Lett. 2019, 19, 7681–7690.
  73. Chen, H.; Wang, H.; Zhang, X.H.; Lee, C.S.; Lee, S.T. Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles. Nano Lett. 2010, 10, 864–868.
  74. Huang, Z.P.; Geyer, N.; Liu, L.F.; Li, M.Y.; Zhong, P. Metal-assisted electrochemical etching of silicon. Nanotechnology 2010, 21, 465301.
  75. Chen, Y.; Li, L.; Zhang, C.; Tuan, C.C.; Chen, X.; Gao, J.; Wong, C.P. Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching. Nano Lett. 2017, 17, 1014–1019.
  76. Lin, H.; Cheung, H.Y.; Xiu, F.; Wang, F.; Yip, S.; Han, N.; Hung, T.; Zhou, J.; Ho, J.C.; Wong, C.Y. Developing controllable anisotropic wet etching to achieve silicon nanorods, nanopencils and nanocones for efficient photon trapping. J. Mater. Chem. A 2013, 1, 9942–9946.
  77. Yeom, J.; Ratchford, D.; Field, C.R.; Brintlinger, T.H.; Pehrsson, P.E. Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal-Assisted Chemical Etching. Adv. Funct. Mater. 2014, 24, 106–116.
  78. Wendisch, F.J.; Rey, M.; Vogel, N.; Bourret, G.R. Large-Scale Synthesis of Highly Uniform Silicon Nanowire Arrays Using Metal-Assisted Chemical Etching. Chem. Mater. 2020, 32, 9425–9434.
  79. Huang, J.; Chiam, S.Y.; Tan, H.H.; Wang, S.; Chim, W.K. Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching. Chem. Mater. 2010, 22, 4111–4116.
  80. Huang, Z.; Zhang, X.; Reiche, M.; Ltu, L.; Lee, W.; Shimizu, T.; Senz, S.; Gösele, U. Extended arrays of vertically aligned Sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching. Nano Lett. 2008, 8, 3046–3051.
  81. De Boor, J.; Geyer, N.; Wittemann, J.V.; Gösele, U.; Schmidt, V. Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching. Nanotechnology 2010, 21, 095302.
  82. Gowrishankar, V.; Miller, N.; McGehee, M.D.; Misner, M.J.; Ryu, D.Y.; Russell, T.P.; Drockenmuller, E.; Hawker, C.J. Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography. Thin Solid Films 2006, 513, 289–294.
  83. Irrera, A.; Magazzù, A.; Artoni, P.; Simpson, S.H.; Hanna, S.; Jones, P.H.; Priolo, F.; Gucciardi, P.G.; Maragò, O.M. Photonic Torque Microscopy of the Nonconservative Force Field for Optically Trapped Silicon Nanowires. Nano Lett. 2016, 16, 4181–4188.
  84. Irrera, A.; Lo Faro, M.J.; D’Andrea, C.; Leonardi, A.A.; Artoni, P.; Fazio, B.; Anna Picca, R.; Cioffi, N.; Trusso, S.; Franzò, G.; et al. Light-emitting silicon nanowires obtained by metal-assisted chemical etching. Semicond. Sci. Technol. 2017, 32, 043004.
  85. Campbell, I.H.; Fauchet, P.M. The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors. Solid State Commun. 1986, 58, 739–741.
  86. Leonardi, A.A.; Lo Faro, M.J.; Irrera, A. CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication. Nanomaterials 2020, 10, 966.
  87. Lo Faro, M.J.; Leonardi, A.A.; Priolo, F.; Fazio, B.; Miritello, M.; Irrera, A. Erbium emission in Er:Y2O3 decorated fractal arrays of silicon nanowires. Sci. Rep. 2020, 10, 12854.
  88. Geyer, N.; Fuhrmann, B.; Huang, Z.; De Boor, J.; Leipner, H.S.; Werner, P. Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts. J. Phys. Chem. C 2012, 116, 13446–13451.
  89. Li, X.; Xiao, Y.; Bang, J.H.; Lausch, D.; Meyer, S.; Miclea, P.-T.; Jung, J.-Y.; Schweizer, S.L.; Lee, J.-H.; Wehrspohn, R.B. Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon. Adv. Mater. 2013, 25, 3187–3191.
  90. Wendisch, F.J.; Abazari, M.; Mahdavi, H.; Rey, M.; Vogel, N.; Musso, M.; Diwald, O.; Bourret, G.R. Morphology-Graded Silicon Nanowire Arrays via Chemical Etching: Engineering Optical Properties at the Nanoscale and Macroscale. ACS Appl. Mater. Interfaces 2020, 12, 13140–13147.
  91. Bodo, F.; Hartmut, S.L.; Höche, H.-R.; Schubert, L.; Werner, P.; Gösele, U. Ordered Arrays of Silicon Nanowires Produced by Nanosphere Lithography and Molecular Beam Epitaxy. Nano Lett. 2005, 5, 2524–2527.
  92. Christophersen, M.; Carstensen, J.; Rönnebeck, S.; Jäger, C.; Jäger, W.; Föll, H. Crystal Orientation Dependence and Anisotropic Properties of Macropore Formation of p- and n-Type Silicon. J. Electrochem. Soc. 2001, 148, E267.
  93. Lehmann, V. The Physics of Macropore Formation in Low Doped n-Type Silicon. J. Electrochem. Soc. 1993, 140, 2836–2843.
  94. Sze, S.M.; Ng, K.K. Physics of Semiconductor Devices; John Wiley & Sons, Inc.: Hoboken, NJ, USA, 2006; ISBN 9780470068328.
  95. Hildreth, O.J.; Fedorov, A.G.; Wong, C.P. 3D spirals with controlled chirality fabricated using metal-assisted chemical etching of silicon. ACS Nano 2012, 6, 10004–10012.
  96. Hildreth, O.J.; Brown, D.; Wong, C.P. 3D Out-of-Plane Rotational Etching with Pinned Catalysts in Metal-Assisted Chemical Etching of Silicon. Adv. Funct. Mater. 2011, 21, 3119–3128.
  97. Li, L.; Zhao, X.; Wong, C.P. Deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity, and 3D complexity by electric bias-attenuated metal-assisted chemical etching (EMaCE). ACS Appl. Mater. Interfaces 2014, 6, 16782–16791.
  98. Qu, Y.; Liao, L.; Li, Y.; Zhang, H.; Huang, Y.; Duan, X. Electrically conductive and optically active porous silicon nanowires. Nano Lett. 2009, 9, 4539–4543.
  99. Zhong, X.; Qu, Y.; Lin, Y.C.; Liao, L.; Duan, X. Unveiling the formation pathway of single crystalline porous silicon nanowires. ACS Appl. Mater. Interfaces 2011, 3, 261–270.
  100. Balasundaram, K.; Sadhu, J.S.; Shin, J.C.; Azeredo, B.; Chanda, D.; Malik, M.; Hsu, K.; Rogers, J.A.; Ferreira, P.; Sinha, S.; et al. Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires. Nanotechnology 2012, 23, 305304.
  101. Chiappini, C.; Liu, X.; Fakhoury, J.R.; Ferrari, M. Biodegradable Porous Silicon Barcode Nanowires with Defined Geometry. Adv. Funct. Mater. 2010, 20, 2231–2239.
  102. To, W.-K.; Tsang, C.-H.; Li, H.-H.; Huang, Z. Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching. Nano Lett. 2011, 11, 5252–5258.
  103. Kim, Y.; Tsao, A.; Lee, D.H.; Maboudian, R. Solvent-induced formation of unidirectionally curved and tilted Si nanowires during metal-assisted chemical etching. J. Mater. Chem. C 2013, 1, 220–224.
  104. Azeredo, B.P.; Sadhu, J.; Ma, J.; Jacobs, K.; Kim, J.; Lee, K.; Eraker, J.H.; Li, X.; Sinha, S.; Fang, N.; et al. Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching. Nanotechnology 2013, 24, 225305–225313.
  105. Togonal, A.S.; He, L.; Roca I Cabarrocas, P. Rusli Effect of wettability on the agglomeration of silicon nanowire arrays fabricated by metal-assisted chemical etching. Langmuir 2014, 30, 10290–10298.
  106. Jafri, I.H.; Busta, H.; Walsh, S.T. Critical point drying and cleaning for MEMS technology. In Proceedings of the MEMS Reliability for Critical and Space Applications, Santa Clara Lawton, CA, USA, 21–22 September 1999; Lawton, R.A., Miller, W.M., Lin, G., Ramesham, R., Eds.; SPIE: Bellingham, WA, USA, 1999; Volume 3880, pp. 51–58.
More
© Text is available under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
Feedback